Memory characteristics of self-assembled tungsten nanodots dispersed in silicon nitride

Yanli Pei, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi

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13 Citations (Scopus)

Abstract

In this letter, tungsten nanodots (W-NDs) in silicon nitride formed by a self-assembled nanodot deposition method have been investigated as a floating gate of nonvolatile memory (NVM). Observations from transmission electron microscopy and x-ray diffraction pattern clearly confirm the formation of crystallized W-NDs with a diameter of ∼5 nm. The metal-oxide-semiconductor device with W-NDs in silicon nitride exhibits a larger memory window (∼4.1 V at ±12 V sweep), indicating charge trapping and distrapping between the W-ND and a silicon substrate. The program/erase behaviors and data retention characteristics were evaluated. After 10 years retention, a large memory window of ∼3.4 V with a low charge loss of ∼15% was extrapolated. These results demonstrate advantages of W-NDs in silicon nitride for the NVM application.

Original languageEnglish
Article number113115
JournalApplied Physics Letters
Volume93
Issue number11
DOIs
Publication statusPublished - 2008 Sep 29

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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