Memory characteristics of metal-oxide-semiconductor capacitor with high density cobalt nanodots floating gate and HfO2 blocking dielectric

Yanli Pei, Chengkuan Yin, Toshiya Kojima, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

In this letter, cobalt nanodots (Co-NDs) had been formed via a self-assembled nanodot deposition. High resolution transmission electron microscopy and x-ray photoelectron spectroscopy analyses clearly show that the high metallic Co-ND is crystallized with small size of ∼2 nm and high density of (4-5) × 1012 / cm2. The metal-oxide-semiconductor device with high density Co-NDs floating gate and high- k HfO2 blocking dielectric exhibits a wide range memory window (0-12 V) due to the charge trapping into and distrapping from Co-NDs. After 10 years retention, a large memory window of ∼1.3 V with a low charge loss of ∼47% was extrapolated. The relative longer data retention demonstrates the advantage of Co-NDs for nonvolatile memory application.

Original languageEnglish
Article number033118
JournalApplied Physics Letters
Volume95
Issue number3
DOIs
Publication statusPublished - 2009 Jul 31

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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