Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications

K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki, T. Shishido

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

The melt-growth conditions to obtain SiGe multicrystals with microscopic compositional distribution are presented. These SiGe multicrystals are useful for new solar cells whose wavelength dependence of the absorption coefficient can be freely designed. The multicrystals with wide compositional distribution from Si to Ge can be grown by a melt growth technique such as the practical casting method. In this work, it was studied as to how much the micro- and macroscopic compositional distribution in SiGe multicrystals grown from binary Si-Ge melts could be controlled by the melt composition and the cooling process. Such SiGe multicrystals with wide distribution of the composition would also have wide distribution of the absorption coefficient, and could be hopeful for new solar cell applications using the practical casting method.

Original languageEnglish
Pages (from-to)93-100
Number of pages8
JournalSolar Energy Materials and Solar Cells
Volume72
Issue number1-4
DOIs
Publication statusPublished - 2002 Apr

Keywords

  • Absorption coefficient
  • Compositional distribution
  • Melt growth
  • Multicrystal
  • SiGe
  • Solar cell

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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