Mechanisms for implantation induced interdiffusion at In0.53Ga0.47As/In0.52Al0.48As heterointerfaces

Tadamasa Kimura, Masahiro Saito, Satoshi Tachi, Riichiro Saito, Michio Murata, Takeshi Kamiya

Research output: Contribution to journalArticlepeer-review


Si, Al, B, Ga and Zn ions are implanted into 5.9 nm thick In0.53Ga0.47As/In0.52Al0.48As quantum wells, and the interdiffusion of the constituent column III atoms (In, Ga and Al) due to subsequent annealing is studied by monitoring a shift in the peak energy of the photoluminescence from the well. Blue (Al ⇄ Ga) and red (In ⇄ Ga) shifts are observed, depending on the implant ion species, doses, energies or the depth of the well. These shifts occur almost in the initial stage (almost within 15s) for the isothermal annealing and then level off for longer annealing times except in the case of Si ion implantation. This enhanced interdiffusion is due to the implantation induced defects (formation of column III interstitials and vacancies) and is explained in terms of the deposited energy of the implant ions at the well. As for Si, the interdiffusion does not stop but continues for longer annealing times and is explained in terms of impurity effects.

Original languageEnglish
Pages (from-to)28-32
Number of pages5
JournalMaterials Science and Engineering B
Issue number1-3
Publication statusPublished - 1997 Feb
Externally publishedYes


  • Ion implantation
  • Photoluminescence
  • Quantum well

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Mechanisms for implantation induced interdiffusion at In0.53Ga0.47As/In0.52Al0.48As heterointerfaces'. Together they form a unique fingerprint.

Cite this