Mechanism of radical control in capacitive RF plasma for ULSI processing

Tetsuya Tatsumi, Hisataka Hayashi, Satoshi Morishita, Shuichi Noda, Mitsuru Okigawa, Naoshi Itabashi, Yukinobu Hikosaka, Masami Inoue

Research output: Contribution to journalArticlepeer-review

57 Citations (Scopus)


The radicals of capacitive plasmas actually used in mass production were analyzed using various measurement systems. The composition of radicals in bulk plasma depends on the gas chemistry, the dissociation process, and interaction with the wall. It is revealed that parent gas (C4F8) is dissociated by multiple collision with electrons according to τ · ne〈συ〉, where τ is the residence time, ne is the electron density, σ is the dissociation collision cross section and υ is the electron velocity. A high-performance etching process, which can realize 0.09 μmφ contact holes with aspect ratio of 11, was achieved using a short residence time to suppress the excess dissociation and the control of deposition species through the addition of O2 to C4F8/Ar plasma as well as the reduction of the density of F radicals through the reaction with the Si wall.

Original languageEnglish
Pages (from-to)2394-2399
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 SUPPL. B
Publication statusPublished - 1998 Apr
Externally publishedYes


  • CF
  • Contact hole
  • Dry etching
  • Plasma
  • RIE
  • Radical
  • SiO

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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