Abstract
Mechanisms of oxide deformation during silicon thermal oxidation are studied by investigating the energetics of intrinsic point defects in the bulk silicon oxide and in the oxide film of the silicon oxide/silicon interface with first-principles calculations. The results suggest that the SiO2 and the SiO interstitials are thought to relate to the deformation of the silicon oxide. Especially, during the silicon oxidation, the SiO interstitial is suggested to be important because it can be formed in the oxide film neighboring to the interface and can enhance the deformation of the oxide films.
| Original language | English |
|---|---|
| Pages (from-to) | 407-410 |
| Number of pages | 4 |
| Journal | Physica B: Condensed Matter |
| Volume | 376-377 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2006 Apr 1 |
| Externally published | Yes |
| Event | Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: 2005 Jul 24 → 2005 Jul 29 |
Keywords
- First-principles calculation
- Interface
- Oxidation
- Silicon oxide
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Kageshima, H., Uematsu, M., Akagi, K., Tsuneyuki, S., Akiyama, T., & Shiraishi, K. (2006). Mechanism of oxide deformation during silicon thermal oxidation. Physica B: Condensed Matter, 376-377(1), 407-410. https://doi.org/10.1016/j.physb.2005.12.105