Mechanism of oxide deformation during silicon thermal oxidation

H. Kageshima, M. Uematsu, K. Akagi, S. Tsuneyuki, T. Akiyama, K. Shiraishi

Research output: Contribution to journalConference article

12 Citations (Scopus)

Abstract

Mechanisms of oxide deformation during silicon thermal oxidation are studied by investigating the energetics of intrinsic point defects in the bulk silicon oxide and in the oxide film of the silicon oxide/silicon interface with first-principles calculations. The results suggest that the SiO2 and the SiO interstitials are thought to relate to the deformation of the silicon oxide. Especially, during the silicon oxidation, the SiO interstitial is suggested to be important because it can be formed in the oxide film neighboring to the interface and can enhance the deformation of the oxide films.

Original languageEnglish
Pages (from-to)407-410
Number of pages4
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
Publication statusPublished - 2006 Apr 1
Externally publishedYes
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: 2005 Jul 242005 Jul 29

Keywords

  • First-principles calculation
  • Interface
  • Oxidation
  • Silicon oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Kageshima, H., Uematsu, M., Akagi, K., Tsuneyuki, S., Akiyama, T., & Shiraishi, K. (2006). Mechanism of oxide deformation during silicon thermal oxidation. Physica B: Condensed Matter, 376-377(1), 407-410. https://doi.org/10.1016/j.physb.2005.12.105