Mechanism of oxide deformation during silicon thermal oxidation

H. Kageshima; M. Uematsu; K. Akagi; S. Tsuneyuki; T. Akiyama; K. Shiraishi

doi:10.1016/j.physb.2005.12.105

Mechanism of oxide deformation during silicon thermal oxidation

H. Kageshima, M. Uematsu, K. Akagi, S. Tsuneyuki, T. Akiyama, K. Shiraishi

Research output: Contribution to journal › Conference article › peer-review

14 Citations (Scopus)

Abstract

Mechanisms of oxide deformation during silicon thermal oxidation are studied by investigating the energetics of intrinsic point defects in the bulk silicon oxide and in the oxide film of the silicon oxide/silicon interface with first-principles calculations. The results suggest that the SiO2 and the SiO interstitials are thought to relate to the deformation of the silicon oxide. Especially, during the silicon oxidation, the SiO interstitial is suggested to be important because it can be formed in the oxide film neighboring to the interface and can enhance the deformation of the oxide films.

Original language	English
Pages (from-to)	407-410
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.105
Publication status	Published - 2006 Apr 1
Externally published	Yes
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: 2005 Jul 24 → 2005 Jul 29

Keywords

First-principles calculation
Interface
Oxidation
Silicon oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.physb.2005.12.105

Fingerprint Dive into the research topics of 'Mechanism of oxide deformation during silicon thermal oxidation'. Together they form a unique fingerprint.

Cite this

@article{a6e0e94a848d4d4f95c9eeac34313832,

title = "Mechanism of oxide deformation during silicon thermal oxidation",

abstract = "Mechanisms of oxide deformation during silicon thermal oxidation are studied by investigating the energetics of intrinsic point defects in the bulk silicon oxide and in the oxide film of the silicon oxide/silicon interface with first-principles calculations. The results suggest that the SiO2 and the SiO interstitials are thought to relate to the deformation of the silicon oxide. Especially, during the silicon oxidation, the SiO interstitial is suggested to be important because it can be formed in the oxide film neighboring to the interface and can enhance the deformation of the oxide films.",

keywords = "First-principles calculation, Interface, Oxidation, Silicon oxide",

author = "H. Kageshima and M. Uematsu and K. Akagi and S. Tsuneyuki and T. Akiyama and K. Shiraishi",

year = "2006",

month = apr,

day = "1",

doi = "10.1016/j.physb.2005.12.105",

language = "English",

volume = "376-377",

pages = "407--410",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "1",

note = "Proceedings of the 23rd International Conference on Defects in Semiconductors ; Conference date: 24-07-2005 Through 29-07-2005",

}

TY - JOUR

T1 - Mechanism of oxide deformation during silicon thermal oxidation

AU - Kageshima, H.

AU - Uematsu, M.

AU - Akagi, K.

AU - Tsuneyuki, S.

AU - Akiyama, T.

AU - Shiraishi, K.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - Mechanisms of oxide deformation during silicon thermal oxidation are studied by investigating the energetics of intrinsic point defects in the bulk silicon oxide and in the oxide film of the silicon oxide/silicon interface with first-principles calculations. The results suggest that the SiO2 and the SiO interstitials are thought to relate to the deformation of the silicon oxide. Especially, during the silicon oxidation, the SiO interstitial is suggested to be important because it can be formed in the oxide film neighboring to the interface and can enhance the deformation of the oxide films.

AB - Mechanisms of oxide deformation during silicon thermal oxidation are studied by investigating the energetics of intrinsic point defects in the bulk silicon oxide and in the oxide film of the silicon oxide/silicon interface with first-principles calculations. The results suggest that the SiO2 and the SiO interstitials are thought to relate to the deformation of the silicon oxide. Especially, during the silicon oxidation, the SiO interstitial is suggested to be important because it can be formed in the oxide film neighboring to the interface and can enhance the deformation of the oxide films.

KW - First-principles calculation

KW - Interface

KW - Oxidation

KW - Silicon oxide

UR - http://www.scopus.com/inward/record.url?scp=33645149361&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645149361&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2005.12.105

DO - 10.1016/j.physb.2005.12.105

M3 - Conference article

AN - SCOPUS:33645149361

VL - 376-377

SP - 407

EP - 410

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

Y2 - 24 July 2005 through 29 July 2005

ER -

Mechanism of oxide deformation during silicon thermal oxidation

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this