Mechanism of neél order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging

L. Baldrati, O. Gomonay, A. Ross, M. Filianina, R. Lebrun, R. Ramos, C. Leveille, F. Fuhrmann, T. R. Forrest, F. MacCherozzi, S. Valencia, F. Kronast, E. Saitoh, J. Sinova, M. Klaüi

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)

Abstract

We probe the current-induced magnetic switching of insulating antiferromagnet-heavy-metal systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one-third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely, the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.

Original languageEnglish
Article number177201
JournalPhysical review letters
Volume123
Issue number17
DOIs
Publication statusPublished - 2019 Oct 24

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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