Mechanism of mechanical deterioration in silicon microcantilever induced by plasma process

Maju Tomura, Chi Hsein Huang, Seiji Samukawa, Yusuke Yoshida, Takahito Ono, Satoshi Yamasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the influences of the defects generated by plasma on a silicon (Si) microcantilever. The E' center density of the microcantilever was drastically increased after Ar plasma irradiation. The mechanical characteristics, including resonant frequency (f) and the mechanical quality (Q) factor of a microcantilever were drastically decreased by plasma irradiation, which revealed that plasma irradiation deteriorated the mechanical characteristics of the micro element. Our results revealed that deterioration of f and Q factor depended on Young's modulus of microcantilevers and the ratio of defect depth to microcantilevers thickness respectively. Furthermore, These results showed considerable impact on Micro- and Nano-Electro-Mechanical Systems.

Original languageEnglish
Title of host publicationIEEE Sensors 2010 Conference, SENSORS 2010
Pages2534-2537
Number of pages4
DOIs
Publication statusPublished - 2010
Event9th IEEE Sensors Conference 2010, SENSORS 2010 - Waikoloa, HI, United States
Duration: 2010 Nov 12010 Nov 4

Publication series

NameProceedings of IEEE Sensors

Other

Other9th IEEE Sensors Conference 2010, SENSORS 2010
CountryUnited States
CityWaikoloa, HI
Period10/11/110/11/4

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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