Mechanism of laser assisted field evaporation from insulating oxides

M. Tsukada, H. Tamura, K. P. McKenna, A. L. Shluger, Y. M. Chen, T. Ohkubo, K. Hono

    Research output: Contribution to journalArticle

    37 Citations (Scopus)

    Abstract

    To explain the recent successful three-dimensional atom probe (3DAP) analyses of insulating oxides by laser assisted field evaporation, we investigated the mechanism of the laser-induced field evaporation of oxides by ab initio calculations. The calculated potential energy surfaces (PESs) for the ground and excited states indicated that the activation barrier height for field evaporation is substantially reduced by the accumulation of holes near the tip apex. This would make the direct electronic excitation possible to promote field evaporation along with thermal excitation. These theoretical calculations are supported by experimental observations.

    Original languageEnglish
    Pages (from-to)567-570
    Number of pages4
    JournalUltramicroscopy
    Volume111
    Issue number6
    DOIs
    Publication statusPublished - 2011

    Keywords

    • Ab intio calculation
    • Field evaporation
    • Laser assisted field evaporation
    • Laser desorption
    • MgO crystal

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Instrumentation

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  • Cite this

    Tsukada, M., Tamura, H., McKenna, K. P., Shluger, A. L., Chen, Y. M., Ohkubo, T., & Hono, K. (2011). Mechanism of laser assisted field evaporation from insulating oxides. Ultramicroscopy, 111(6), 567-570. https://doi.org/10.1016/j.ultramic.2010.11.011