Mechanism of large magnetoresistance in Co2 MnSi/Ag/ Co 2 MnSi devices with current perpendicular to the plane

Y. Sakuraba, K. Izumi, T. Iwase, S. Bosu, K. Saito, Koki Takanashi, Y. Miura, K. Futatsukawa, Kazutaka Abe, Masafumi Shirai

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160 Citations (Scopus)


Fully epitaxial current-perpendicular-to-plane giant magnetoresistance (MR) devices with half-metallic Co2 MnSi (CMS) electrodes and a Ag spacer were fabricated to investigate the relationship between the chemical ordering in CMS and its MR properties, including bulk and interface spin-asymmetry coefficients β and γ. CMS/Ag/CMS annealed at 550°C shows the largest MR ratio: 36.4% and 67.2% at RT and 110 K, respectively. An analysis based on Valet-Fert's model reveals large spin asymmetry (γ>0.8) at the CMS/Ag interface, which contributes predominantly to the large MR ratio observed. First-principles ballistic conductance calculations for (001)-CMS/Ag/CMS predict a high majority-spin electron conductance, which could be the origin of the large γ observed in this study.

Original languageEnglish
Article number094444
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number9
Publication statusPublished - 2010 Sep 28

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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