Mechanism of higher order contributions in interface anisotropy of thin films: FeCo/MgO case

J. Barker, A. Kalitsov, A. Singh, O. N. Mryasov, S. Okatov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Current state of the art perpendicular magnetic tunnel junctions (pMTJs) rely upon a large uniaxial interface anisotropy to overcome the demagnetizing field [1-3]. Experimental measurements have found that as well as the expected K1sin2(θ) anisotropy energy, a higher order K2sin4(θ) contribution is present [2,3]. In thin films with bulk anisotropies K2 can arise from a distribution of the anisotropy axes. In the course of constructing a model of FeCo/MgO we unexpectedly found a K2 sin4(θ) dependence in the free energy, even without any disorder in the anisotropy axes or higher order magneto-crystalline anisotropy.

Original languageEnglish
Title of host publication2015 IEEE International Magnetics Conference, INTERMAG 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973224
DOIs
Publication statusPublished - 2015 Jul 14
Event2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China
Duration: 2015 May 112015 May 15

Publication series

Name2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other2015 IEEE International Magnetics Conference, INTERMAG 2015
CountryChina
CityBeijing
Period15/5/1115/5/15

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Barker, J., Kalitsov, A., Singh, A., Mryasov, O. N., & Okatov, S. (2015). Mechanism of higher order contributions in interface anisotropy of thin films: FeCo/MgO case. In 2015 IEEE International Magnetics Conference, INTERMAG 2015 [7157633] (2015 IEEE International Magnetics Conference, INTERMAG 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2015.7157633