Mechanism of Ga implantation-induced intermixing of GaAs-AlGaAs material

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Abstract

Ga implantation-induced intermixing is examined in terms of dose dependence and interdiffusion characteristics under conditions of dual implantation of As and Ga. At ion doses below 1015 cm-2, intermixing is mainly enhanced by the diffusion of defects. In the ion-dose region below 3×1013 cm-2, both implantation-induced damage and stoichiometric disturbances contribute to the formation of diffusing defects. The damage effect becomes dominant in the dose region around 1014 cm-2. In the dose region above 1015 cm-2, almost all interdiffusion is governed by atom coilision due to implantation.

Original languageEnglish
Pages (from-to)L161-L165
JournalJapanese journal of applied physics
Volume28
Issue number2 A
DOIs
Publication statusPublished - 1989 Feb
Externally publishedYes

Keywords

  • As
  • Ga
  • GaAs-AIGaAs quantum wells
  • Intermixing
  • Ion implantation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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