Mechanism of field emission from a highly phosphorous-doped chemical vapor deposition diamond (111) surface

Shozo Kono, Go Takyo, Naoki Amano, Nickolay I. Plusnin, Kenji Mizuochi, Tomohiro Aoyama, Tadahiko Goto, Tadashi Abukawa, Akihiko Namba, Natsuo Tasumi, Yoshiki Nishibayashi, Takahiro Imai

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

The mechanism of field emission from a highly P-doped diamond (111) surface has been studied by field/photo emission electron micro-spectroscopy. It was found that field emission peaks were located at -3 to -6 eV with respect to the substrate Fermi level (EF) and that photoemission peaks were located at -1 to +2 eV with respect to the substrate EF. Comparing this with the knowledge of work function and electron affinity of the sample, the mechanism of field emission has been elucidated. Namely, field emitted electrons are tunnel-emitted from states around the surface Ep and there is a large amount of resistive potential drop at the emission site.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number1-3
DOIs
Publication statusPublished - 2007 Jan 12

Keywords

  • Electron micro-spectroscopy
  • Field emission electron microscopy
  • Field emission mechanism
  • Phosphorous-doped diamond
  • Photoemission electron microscopy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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