Mechanism of copper selenide growth on copper-oxide-selenium system

Y. Ishikawa, O. Kido, Yuki Kimura, M. Kurumada, H. Suzuki, Y. Saito, C. Kaito

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Transmission electron microscopy was used to study spontaneous copper selenide formation on Cu particles covered with an oxide layer. Even if the copper particle surface was covered with a Cu2O layer, selenides were formed by diffusion through the metal oxide layer. For a particle size less than 50 nm, selenide was formed in Cu particles by the diffusion of Se atoms passing through the Cu2O layer. For particles larger than 100 nm in size, selenide was formed in Se film. It was also found that the thickness of the Cu2O layer on the surface of Cu particle accelerated diffusion of Se atoms to the copper particle.

Original languageEnglish
Pages (from-to)276-280
Number of pages5
JournalSurface Science
Volume548
Issue number1-3
DOIs
Publication statusPublished - 2004 Jan 1

Keywords

  • Chalcogens
  • Clusters
  • Copper
  • Diffusion and migration
  • Electron microscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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