Mechanism of carrier mobility degradation induced by crystallization of Hfo2 gate dielectrics

Takashi Ando, Takayoshi Shimura, Heiji Watanabe, Tomoyuki Hirano, Shinichi Yoshida, K. Taori Tai, Shinpei Yamaguchi, Hayato Iwamoto, Shingo Kadomura, Satoshi Toyoda, Hiroshi Kumigashira, Masaharu Oshima

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

We have experimentally shown that crystallization of HfO2 and the subsequent formation of fixed charges localized at the HfO 2/SiO2 interface bring about a degradation of electron mobility. Systematic analyses of valence-band photoemission and transmission electron microscopy indicate that the oxygen transfer from the HfO2 layer to the Si substrate is promoted upon the crystallization of HfO 2 and the fixed charges are generated during the process. These findings highlight the importance of controlling the crystallinity of HfO 2 for realizing high performance metal gate high-*: field-effect transistors.

Original languageEnglish
Article number071402
JournalApplied Physics Express
Volume2
Issue number7
DOIs
Publication statusPublished - 2009 Jul 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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