TY - JOUR
T1 - Mechanism for heteroepitaxial growth of transparent p-type semiconductor
T2 - LaCuOS by reactive solid-phase epitaxy
AU - Hiramatsu, Hidenori
AU - Ohta, Hiromichi
AU - Suzuki, Toshiyuki
AU - Honjo, Chizuru
AU - Ikuhara, Yuichi
AU - Ueda, Kazushige
AU - Kamiya, Toshio
AU - Hirano, Masahiro
AU - Hosono, Hideo
PY - 2004/3/1
Y1 - 2004/3/1
N2 - A unique epitaxial growth method, reactive solid-phase epitaxy, was used to fabricate heteroepitaxial thin films of LaCuOS, a transparent p-type semiconductor with layered structure. The epitaxial growth mechanism is examined through microscopic observations. A thin metallic Cu layer deposited between the amorphous LaCuOS (a-LaCuOS) and the yttria-stabilized zirconia (YSZ) single-crystal substrate before thermally annealing is a key to realizing the epitaxial LaCuOS films in this process. To grow the epitaxial films, it is critical for the Cu layer to have a discontinuous structure with triple junctions among the Cu, a-LaCuOS layer, and the YSZ substrate. The Cu layer is needed to create seed grains for the epitaxial LaCuOS at the junctions. The resulting seed grains work as an epitaxy template for subsequent epitaxial growth from the substrate to the film's top surface, and high temperatures such as 1000°C are necessary to completely convert the a-LaCuOS layer to an epitaxial layer.
AB - A unique epitaxial growth method, reactive solid-phase epitaxy, was used to fabricate heteroepitaxial thin films of LaCuOS, a transparent p-type semiconductor with layered structure. The epitaxial growth mechanism is examined through microscopic observations. A thin metallic Cu layer deposited between the amorphous LaCuOS (a-LaCuOS) and the yttria-stabilized zirconia (YSZ) single-crystal substrate before thermally annealing is a key to realizing the epitaxial LaCuOS films in this process. To grow the epitaxial films, it is critical for the Cu layer to have a discontinuous structure with triple junctions among the Cu, a-LaCuOS layer, and the YSZ substrate. The Cu layer is needed to create seed grains for the epitaxial LaCuOS at the junctions. The resulting seed grains work as an epitaxy template for subsequent epitaxial growth from the substrate to the film's top surface, and high temperatures such as 1000°C are necessary to completely convert the a-LaCuOS layer to an epitaxial layer.
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U2 - 10.1021/cg034163l
DO - 10.1021/cg034163l
M3 - Article
AN - SCOPUS:1642526758
VL - 4
SP - 301
EP - 307
JO - Crystal Growth and Design
JF - Crystal Growth and Design
SN - 1528-7483
IS - 2
ER -