MECHANISM AND SUPPRESSION OF DRAIN CURRENT DRIFT IN InP MISFETs.

Hideki Hasegawa, Takayuki Sawada, Hideo Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The temperature dependence of the drain current drift in InP MISFETs is shown to be a measurement artefact. A model involving interface states below the conduction band is presented which explains the current drift quantitatively. It is shown that incorporation of thin native oxide interfacial layer is effective in suppressing the current drift.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
EditorsB. de Cremoux
Pages569-574
Number of pages6
Edition74
Publication statusPublished - 1985
Externally publishedYes

Publication series

NameInstitute of Physics Conference Series
Number74
ISSN (Print)0373-0751

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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