Mechanism and structural dependence of kink phenomena in InAlAs/InGaAs HEMTs

Tetsuya Suemitsu; Takatomo Enoki; Masaaki Tomizawa; Naoteru Shigekawa; Yasunobu Ishii

Mechanism and structural dependence of kink phenomena in InAlAs/InGaAs HEMTs

Tetsuya Suemitsu, Takatomo Enoki, Masaaki Tomizawa, Naoteru Shigekawa, Yasunobu Ishii

Research output: Contribution to journal › Conference article › peer-review

Abstract

A model of the kink phenomena in InAlAs/InGaAs heterojunction electron mobility transistors (HEMT) was investigated using two dimensional numerical device simulation. The analysis of electron and hole density in the side-etched region led to the development of the kink model. The electron density of the model in the channel of the side-etched region is reduced by surface states. Once the holes are generated by impact ionization accumulating in the source-to-gate side-etched-ratio, the potential profile is modified and the electron density is recovered. Keeping the electron density in the side-etched region high or short is an effective way of eliminating the kink.

Original language	English
Pages (from-to)	365-368
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication status	Published - 1997 Jan 1
Externally published	Yes
Event	Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA Duration: 1997 May 11 → 1997 May 15

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

Access to Document

Fingerprint Dive into the research topics of 'Mechanism and structural dependence of kink phenomena in InAlAs/InGaAs HEMTs'. Together they form a unique fingerprint.

Cite this

Mechanism and structural dependence of kink phenomena in InAlAs/InGaAs HEMTs. / Suemitsu, Tetsuya; Enoki, Takatomo; Tomizawa, Masaaki; Shigekawa, Naoteru; Ishii, Yasunobu.

In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 01.01.1997, p. 365-368.

Research output: Contribution to journal › Conference article › peer-review

@article{b5a61f2e76ea430aaa7355a6776c5407,

title = "Mechanism and structural dependence of kink phenomena in InAlAs/InGaAs HEMTs",

abstract = "A model of the kink phenomena in InAlAs/InGaAs heterojunction electron mobility transistors (HEMT) was investigated using two dimensional numerical device simulation. The analysis of electron and hole density in the side-etched region led to the development of the kink model. The electron density of the model in the channel of the side-etched region is reduced by surface states. Once the holes are generated by impact ionization accumulating in the source-to-gate side-etched-ratio, the potential profile is modified and the electron density is recovered. Keeping the electron density in the side-etched region high or short is an effective way of eliminating the kink.",

author = "Tetsuya Suemitsu and Takatomo Enoki and Masaaki Tomizawa and Naoteru Shigekawa and Yasunobu Ishii",

year = "1997",

month = jan,

day = "1",

language = "English",

pages = "365--368",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials ; Conference date: 11-05-1997 Through 15-05-1997",

}

TY - JOUR

T1 - Mechanism and structural dependence of kink phenomena in InAlAs/InGaAs HEMTs

AU - Suemitsu, Tetsuya

AU - Enoki, Takatomo

AU - Tomizawa, Masaaki

AU - Shigekawa, Naoteru

AU - Ishii, Yasunobu

PY - 1997/1/1

Y1 - 1997/1/1

N2 - A model of the kink phenomena in InAlAs/InGaAs heterojunction electron mobility transistors (HEMT) was investigated using two dimensional numerical device simulation. The analysis of electron and hole density in the side-etched region led to the development of the kink model. The electron density of the model in the channel of the side-etched region is reduced by surface states. Once the holes are generated by impact ionization accumulating in the source-to-gate side-etched-ratio, the potential profile is modified and the electron density is recovered. Keeping the electron density in the side-etched region high or short is an effective way of eliminating the kink.

AB - A model of the kink phenomena in InAlAs/InGaAs heterojunction electron mobility transistors (HEMT) was investigated using two dimensional numerical device simulation. The analysis of electron and hole density in the side-etched region led to the development of the kink model. The electron density of the model in the channel of the side-etched region is reduced by surface states. Once the holes are generated by impact ionization accumulating in the source-to-gate side-etched-ratio, the potential profile is modified and the electron density is recovered. Keeping the electron density in the side-etched region high or short is an effective way of eliminating the kink.

UR - http://www.scopus.com/inward/record.url?scp=0030698966&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030698966&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030698966

SP - 365

EP - 368

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SN - 1092-8669

T2 - Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials

Y2 - 11 May 1997 through 15 May 1997

ER -