Mechanism and structural dependence of kink phenomena in InAlAs/InGaAs HEMTs

Tetsuya Suemitsu, Takatomo Enoki, Masaaki Tomizawa, Naoteru Shigekawa, Yasunobu Ishii

Research output: Contribution to journalConference articlepeer-review

19 Citations (Scopus)

Abstract

A model of the kink phenomena in InAlAs/InGaAs heterojunction electron mobility transistors (HEMT) was investigated using two dimensional numerical device simulation. The analysis of electron and hole density in the side-etched region led to the development of the kink model. The electron density of the model in the channel of the side-etched region is reduced by surface states. Once the holes are generated by impact ionization accumulating in the source-to-gate side-etched-ratio, the potential profile is modified and the electron density is recovered. Keeping the electron density in the side-etched region high or short is an effective way of eliminating the kink.

Original languageEnglish
Pages (from-to)365-368
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1997 Jan 1
Externally publishedYes
EventProceedings of the 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA
Duration: 1997 May 111997 May 15

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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