Mechanical stress-induced damage on breakdown characteristic of dielectric thin films in MOS transistors

Hideo Miura, Hiroshi Moriya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Mechanical Stress-induced deterioration of the breakdown characteristic of SiO2 films was discussed analytically and experimentally. The decrease in the band gap of the oxide due to the crystal deformation is the main reason for the deterioration. The change rate was analyzed by the first principles calculation The mechanism of the stress development in a MOS transistor structure was clarified by stress measurement of thin films. The intrinsic stress of the thin films used for the gate electrode of the transistor is the important factor for determining the residual stress in the oxide under the electrode. The residual stress in the silicon substrate before the oxide (SiO2) formation (surface oxidation of the substrate) is another important factor which affects the quality of the oxide film. In particular, the density of the unstable atomic bonding of silicon near the Si/SiO2 interface varies depending on the stress in the substrate..

Original languageEnglish
Title of host publicationAdvances in Electronic Packaging 2003
Subtitle of host publicationVolume 1
Pages729-734
Number of pages6
Volume1
Publication statusPublished - 2003 Dec 1
Externally publishedYes
Event2003 International Electronic Packaging Technical Conference and Exhibition - Haui, HI, United States
Duration: 2003 Jul 62003 Jul 11

Other

Other2003 International Electronic Packaging Technical Conference and Exhibition
CountryUnited States
CityHaui, HI
Period03/7/603/7/11

ASJC Scopus subject areas

  • Engineering(all)
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Miura, H., & Moriya, H. (2003). Mechanical stress-induced damage on breakdown characteristic of dielectric thin films in MOS transistors. In Advances in Electronic Packaging 2003: Volume 1 (Vol. 1, pp. 729-734)