Mechanical strengthening of silicon torsion bar of scanning micro mirror by hydrogen anneal

Shinya Yoshida, Shuji Tanaka, Masayoshi Esashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The report on hydrogen anneal to enhance the torsional fracture strength of dry-etched single crystal silicon (SCS) microstructures. Moving-magnet-type scanning minors with torsion bars were employed as fracture test specimens. Two types of device were fabricated using SCS and silicon-on-insulator (SOI) wafers by deep reactive ion etching (DRIE). For the SCS-wafer-based device, scalloping on DRIE sidewalls were smoothed out, and the fracture strength of the torsion bar was improved by a factor of 3 by 120 min hydrogen anneal. For the SOI-wafer-based device, hydrogen anneal introduced surface inegularity on Si sidewalls by hydrogen-induced etching under the existence of S/O2. As a result, the fracture strength of the torsion bar was degraded contrarily. Therefore, hydrogen anneal is effective to improve the mechanical reliability of SCS microstructures without S/O2.

Original languageEnglish
Title of host publication21st International Display Workshops 2014, IDW 2014
PublisherSociety for Information Display
Pages1283-1286
Number of pages4
ISBN (Electronic)9781510827790
Publication statusPublished - 2014 Jan 1
Event21st International Display Workshops 2014, IDW 2014 - Niigata, Japan
Duration: 2014 Dec 32014 Dec 5

Publication series

Name21st International Display Workshops 2014, IDW 2014
Volume2

Other

Other21st International Display Workshops 2014, IDW 2014
CountryJapan
CityNiigata
Period14/12/314/12/5

Keywords

  • Hydrogen anneal
  • Mechanical strength of silicon
  • Scanning mirror

ASJC Scopus subject areas

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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