Mechanical strengthening of silicon torsion bar of MEMS scanning mirror by hydrogen anneal

R. Hajika, S. Yoshida, W. Makishi, Y. Kanamori, S. Tanaka, M. Esashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

This paper reports on the strengthening effect of hydrogen anneal on torsional fracture strength of single crystal silicon (SCS). Moving-magnet-type MEMS mirrors were prepared by fabricating SCS and silicon on insulator (SOI) wafers via deep reactive ion etching (DRIE) as fracture test specimens. As a result of the fracture test of the torsion bar on the mirrors, the torsion bar fabricated using a SCS wafer could be strengthened to about 4 times in average by hydrogen anneal. By contrast, that using a SOI wafer was weaken to half. This mechanical strengthening effect has the potential ability to provide highly-reliable and tough SCS-based MEMS devices.

Original languageEnglish
Title of host publicationIEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013
Pages425-428
Number of pages4
DOIs
Publication statusPublished - 2013
EventIEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013 - Taipei, Taiwan, Province of China
Duration: 2013 Jan 202013 Jan 24

Publication series

NameProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)1084-6999

Other

OtherIEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013
CountryTaiwan, Province of China
CityTaipei
Period13/1/2013/1/24

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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