Mechanical property and dislocation dynamics of GaAsP alloy semiconductor

Ichiro Yonenaga, Koji Sumino, Gunzo Izawa, Hisao Watanabe, Junji Matsui

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


The mechanical behavior of GaAsP alloy semiconductor was investigated by means of compressive deformation and compared with those of GaAs and GaP. The nature of collective motion of dislocations during deformation was determined by strain-rate cycling tests. The dynamic characteristics of dislocations in GaAsP were found to be similar to those in elemental and compound semiconductors such as Si, Ge, GaAs, and GaP. An alloy semiconductor has a component of the flow stress that is temperature-insensitive and is absent in compound semiconductors.

Original languageEnglish
Pages (from-to)361-365
Number of pages5
JournalJournal of Materials Research
Issue number2
Publication statusPublished - 1989 Apr
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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