Mechanical properties and dislocation dynamics of III–V compound semiconductors

I. Yonenaga, K. Sumino

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)


Mechanical properties of GaP, GaAs, InP, and InAs crystals are investigated by means of compressive deformation as a function of temperature and strain rate. The dynamic characteristics of dislocations are deduced from the analyses of strain rate cycling tests. The deformation of III–V compound semiconductors is controlled by dislocation processes which are essentially the same as those in elemental semiconductors such as Si, etc. The dislocation velocities which are the rate‐controlling parameters in the deformation of semiconductors are deduced as function of stress and temperature from experimental results.

Original languageEnglish
Pages (from-to)663-670
Number of pages8
Journalphysica status solidi (a)
Issue number2
Publication statusPublished - 1992 Jun 16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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