Mechanical properties of GaP, GaAs, InP, and InAs crystals are investigated by means of compressive deformation as a function of temperature and strain rate. The dynamic characteristics of dislocations are deduced from the analyses of strain rate cycling tests. The deformation of III–V compound semiconductors is controlled by dislocation processes which are essentially the same as those in elemental semiconductors such as Si, etc. The dislocation velocities which are the rate‐controlling parameters in the deformation of semiconductors are deduced as function of stress and temperature from experimental results.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics