Mechanical characteristics of thin dies/wafers in three-dimensional large-scale integrated systems

M. Murugesan, T. Fukushima, J. C. Bea, K. W. Lee, M. Kovanagi, T. Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Ultra-thin silicon dies/wafers with thickness less than 30 μmare profoundly used in the 3D-integration (vertical stacking of functional chips) and in the optoelectronics, in order to reduce the interconnect length and the resistive-capacitive delay. However, to improve the quality and fabrication yield of the three-dimensional large-scale integration (3D-LSI) process, it is important to have very good mechanical properties of such ultra-thin dies. Mechanical properties of the ultra-thin dies such as Young modulus (using nano-indenter), residual stress (by laser micro-Raman spectroscopy), and also the crystal orientation (by using electron back-scatter diffraction) were investigated with respect to different die thinning processes (chemical mechanical polishing, plasma etching, dry polishing, kai-dry polishing, poly grinding, ultra-poly grinding, #2000, etc), for various wafer thicknesses (10 μm, 30 μm, 50μm, 100 μm, 200 μm) and for the different kinds of the wafer (P/P+, P/P-, and wafer with internal gettering (IG) layer). The chemically-mechanically polished ultra-thin dies/wafers were found to be extraordinarily good in terms of mechanical strength as well as residual stress as compared to the ultra-thin dies/wafers fabricated by all other die thinning procedures.

Original languageEnglish
Title of host publication2013 24th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2013
Pages66-69
Number of pages4
DOIs
Publication statusPublished - 2013 Aug 19
Event2013 24th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2013 - Saratoga Springs, NY, United States
Duration: 2013 May 142013 May 16

Publication series

NameASMC (Advanced Semiconductor Manufacturing Conference) Proceedings
ISSN (Print)1078-8743

Other

Other2013 24th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2013
CountryUnited States
CitySaratoga Springs, NY
Period13/5/1413/5/16

Keywords

  • Hardness
  • Young modulus
  • nano-indentation
  • stress-relief method
  • ultra-thin silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Engineering(all)
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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    Murugesan, M., Fukushima, T., Bea, J. C., Lee, K. W., Kovanagi, M., & Tanaka, T. (2013). Mechanical characteristics of thin dies/wafers in three-dimensional large-scale integrated systems. In 2013 24th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2013 (pp. 66-69). [6552777] (ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings). https://doi.org/10.1109/ASMC.2013.6552777