TY - GEN
T1 - Mechanical characteristics of thin dies/wafers in three-dimensional large-scale integrated systems
AU - Murugesan, M.
AU - Fukushima, T.
AU - Bea, J. C.
AU - Lee, K. W.
AU - Kovanagi, M.
AU - Tanaka, T.
PY - 2013/8/19
Y1 - 2013/8/19
N2 - Ultra-thin silicon dies/wafers with thickness less than 30 μmare profoundly used in the 3D-integration (vertical stacking of functional chips) and in the optoelectronics, in order to reduce the interconnect length and the resistive-capacitive delay. However, to improve the quality and fabrication yield of the three-dimensional large-scale integration (3D-LSI) process, it is important to have very good mechanical properties of such ultra-thin dies. Mechanical properties of the ultra-thin dies such as Young modulus (using nano-indenter), residual stress (by laser micro-Raman spectroscopy), and also the crystal orientation (by using electron back-scatter diffraction) were investigated with respect to different die thinning processes (chemical mechanical polishing, plasma etching, dry polishing, kai-dry polishing, poly grinding, ultra-poly grinding, #2000, etc), for various wafer thicknesses (10 μm, 30 μm, 50μm, 100 μm, 200 μm) and for the different kinds of the wafer (P/P+, P/P-, and wafer with internal gettering (IG) layer). The chemically-mechanically polished ultra-thin dies/wafers were found to be extraordinarily good in terms of mechanical strength as well as residual stress as compared to the ultra-thin dies/wafers fabricated by all other die thinning procedures.
AB - Ultra-thin silicon dies/wafers with thickness less than 30 μmare profoundly used in the 3D-integration (vertical stacking of functional chips) and in the optoelectronics, in order to reduce the interconnect length and the resistive-capacitive delay. However, to improve the quality and fabrication yield of the three-dimensional large-scale integration (3D-LSI) process, it is important to have very good mechanical properties of such ultra-thin dies. Mechanical properties of the ultra-thin dies such as Young modulus (using nano-indenter), residual stress (by laser micro-Raman spectroscopy), and also the crystal orientation (by using electron back-scatter diffraction) were investigated with respect to different die thinning processes (chemical mechanical polishing, plasma etching, dry polishing, kai-dry polishing, poly grinding, ultra-poly grinding, #2000, etc), for various wafer thicknesses (10 μm, 30 μm, 50μm, 100 μm, 200 μm) and for the different kinds of the wafer (P/P+, P/P-, and wafer with internal gettering (IG) layer). The chemically-mechanically polished ultra-thin dies/wafers were found to be extraordinarily good in terms of mechanical strength as well as residual stress as compared to the ultra-thin dies/wafers fabricated by all other die thinning procedures.
KW - Hardness
KW - Young modulus
KW - nano-indentation
KW - stress-relief method
KW - ultra-thin silicon
UR - http://www.scopus.com/inward/record.url?scp=84881425804&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84881425804&partnerID=8YFLogxK
U2 - 10.1109/ASMC.2013.6552777
DO - 10.1109/ASMC.2013.6552777
M3 - Conference contribution
AN - SCOPUS:84881425804
SN - 9781467350068
T3 - ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings
SP - 66
EP - 69
BT - 2013 24th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2013
T2 - 2013 24th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2013
Y2 - 14 May 2013 through 16 May 2013
ER -