Measurements of local optical properties of Si-doped GaAs (110) surfaces using modulation scanning tunneling microscope cathodoluminescence spectroscopy

Kentaro Watanabe, Yoshiaki Nakamura, Masakazu Ichikawa

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

The authors developed modulation scanning tunneling microscope cathodoluminescence (STM-CL) spectroscopy where low-energy (∼100 eV) electrons field-emitted from scanning tunneling microscope(STM) tips were used as a bright excitation source. The modulation STM-CL spectroscopy of Si-doped GaAs (110) cleaved surfaces showed that the peak redshifted from GaAs band-edge luminescence in some of the sample positions. These position-dependent redshifts, which were explained by the transition related to local Si acceptors, demonstrated a spatial resolution of less than 600 nm in the modulation STM-CL spectroscopy.

Original languageEnglish
Pages (from-to)195-200
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume26
Issue number1
DOIs
Publication statusPublished - 2008

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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