TY - JOUR
T1 - Measurement of thermophysical properties of molten Si-Cr and Si-Fe alloys for design of solution growth of SiC
AU - Kawanishi, Sakiko
AU - Abe, Mai
AU - Koyama, Chihiro
AU - Ishikawa, Takehiko
AU - Shibata, Hiroyuki
N1 - Funding Information:
The authors thank to Ms. Nakata and Mr. Watanabe in Advanced Engineering Services Co., Ltd. for their helps with the measurements by the electrostatic levitator. This research was partly supported by JSPS KAKENHI 17H04960 and 18K18934 . We thank Edanz Group ( www.edanzediting.com/ac ) for editing a draft of this manuscript.
Publisher Copyright:
© 2020 Elsevier B.V.
PY - 2020/7/1
Y1 - 2020/7/1
N2 - To optimize the solution growth process, temperature and convection of the solvent, which are significantly affected by the thermophysical properties, have to be well controlled. In this study, the thermophysical properties of molten Si-Cr and Si-Fe alloys, which are important solvent systems for the solution growth of silicon carbide (SiC), were measured via electrostatic levitation and laser flash methods. The total hemispherical emissivity, spectral hemispherical emissivity, and heat capacity at constant pressure of the Si-Cr alloys at their liquidus temperatures were successfully obtained, and their compositional dependencies are discussed. The thermal diffusivity and thermal conductivity of the Si-Cr and Si-Fe alloys exhibited a linearly increasing trend with increasing temperature. Thermal conductivities of a few tens of W∙m−1∙K−1 were obtained, and the thermal conductivity markedly decreased by alloying for both the investigated alloy systems. Such a large drop would lead to a large difference of the temperature distribution during the solution growth of SiC, and hence the obtained properties can be utilized for optimization of the process.
AB - To optimize the solution growth process, temperature and convection of the solvent, which are significantly affected by the thermophysical properties, have to be well controlled. In this study, the thermophysical properties of molten Si-Cr and Si-Fe alloys, which are important solvent systems for the solution growth of silicon carbide (SiC), were measured via electrostatic levitation and laser flash methods. The total hemispherical emissivity, spectral hemispherical emissivity, and heat capacity at constant pressure of the Si-Cr alloys at their liquidus temperatures were successfully obtained, and their compositional dependencies are discussed. The thermal diffusivity and thermal conductivity of the Si-Cr and Si-Fe alloys exhibited a linearly increasing trend with increasing temperature. Thermal conductivities of a few tens of W∙m−1∙K−1 were obtained, and the thermal conductivity markedly decreased by alloying for both the investigated alloy systems. Such a large drop would lead to a large difference of the temperature distribution during the solution growth of SiC, and hence the obtained properties can be utilized for optimization of the process.
KW - A1. Heat transfer
KW - A1. Thermophysical properties
KW - A2. Growth from solutions
KW - B1. Silicon carbide
KW - B1. Silicon-based alloys
KW - B2. Semiconducting silicon compounds
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U2 - 10.1016/j.jcrysgro.2020.125658
DO - 10.1016/j.jcrysgro.2020.125658
M3 - Article
AN - SCOPUS:85083385256
VL - 541
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
M1 - 125658
ER -