MEASUREMENT OF THE SUPERCONDUCTING ENERGY GAP IN SINGLE CRYSTAL V//3Si.

Seizo Morita, Syozo Imai, Seiji Yamashita, Nobuo Mikoshiba, Naoki Toyota, Tetsuo Fukase, Takashi Nakanomyo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We measured the energy gap of single crystal V//3Si using a bridge-type point-contact Josephson junction. From dc I-V curves, we obtained that the energy gap of Nb-V//3Si bridge-type junction was DELTA (Nb) plus DELTA (V//3Si) equals 3. 93meV for (100) and 4. 53meV for (111) crystal orientation of V//3Si, respectively. The values of the energy gap DELTA (V//3Si) and 2 DELTA (V//3Si)/kT//c(V//3Si) for (111) crystal orientation of V//3Si are quite large compared to the previous result obtained by Moore et al. The energy gap anisotropy, DELTA (111) greater than DELTA (100), is qualitatively opposite to the previous result obtained for Nb//3Sn.

Original languageEnglish
Title of host publicationUnknown Host Publication Title
PublisherNorth-Holland
Pages601-602
Number of pages2
Editionpt 1
ISBN (Print)0444869107
Publication statusPublished - 1984 Dec 1

Publication series

Name
Numberpt 1

ASJC Scopus subject areas

  • Engineering(all)

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