We measured the energy gap of single crystal V//3Si using a bridge-type point-contact Josephson junction. From dc I-V curves, we obtained that the energy gap of Nb-V//3Si bridge-type junction was DELTA (Nb) plus DELTA (V//3Si) equals 3. 93meV for (100) and 4. 53meV for (111) crystal orientation of V//3Si, respectively. The values of the energy gap DELTA (V//3Si) and 2 DELTA (V//3Si)/kT//c(V//3Si) for (111) crystal orientation of V//3Si are quite large compared to the previous result obtained by Moore et al. The energy gap anisotropy, DELTA (111) greater than DELTA (100), is qualitatively opposite to the previous result obtained for Nb//3Sn.