Measurement method for transient programming current of 1T1R phase-change memory

K. Kurotsuchi, N. Takaura, N. Matsuzaki, Y. Matsui, O. Tonomura, Y. Fujisaki, N. Kitai, R. Takemura, K. Osada, S. Hanzawa, H. Moriya, T. Iwasaki, T. Kawahara, M. Terao, M. Matsuoka, M. Moniwa

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    This paper presents a measurement method for 1 transistor - 1 resistance (1T1R), phase-change memory (PCM) devices. We fabricated a novel PCM test structure with an internal voltage measurement point, and we monitored the voltage drop between 1T and 1R. The voltage drop was accurately converted to the PCM programming current. This test structure enabled us to measure programming current of less than 100 μA with a width of 100 ns. This method is essential for measuring the low-power operation of PCMs and other nonvolatile memories.

    Original languageEnglish
    Title of host publication2006 International Conference on Microelectronic Test Structures - Digest of Technical Papers
    Pages43-46
    Number of pages4
    DOIs
    Publication statusPublished - 2006 Oct 13
    Event2006 International Conference on Microelectronic Test Structures - Austin, TX, United States
    Duration: 2006 Mar 62006 Mar 9

    Publication series

    NameIEEE International Conference on Microelectronic Test Structures
    Volume2006

    Other

    Other2006 International Conference on Microelectronic Test Structures
    CountryUnited States
    CityAustin, TX
    Period06/3/606/3/9

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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