TY - JOUR
T1 - MD simulation of effect of crystal orientations and substrate temperature on growth of Cu/Ni bilayer films
AU - Fu, Tao
AU - Peng, Xianghe
AU - Zhao, Yinbo
AU - Feng, Chao
AU - Huang, Cheng
AU - Li, Qibin
AU - Wang, Zhongchang
N1 - Funding Information:
The authors acknowledge the financial supports from the National Natural Science Foundation of China (Grant nos. 11332013, 11272364), the Scientific Research (B) (Grant no. 15H04114), the Challenging Exploratory Research (Grant no. 15K14117), the JSPS and CAS under Japan–China Scientific Cooperation Program, the Shorai Foundation for Science and Technology, and the Chongqing Research Program of Basic Research and Frontier Technology (Grant no. cstc2015jcyjA50008).
Publisher Copyright:
© 2016, Springer-Verlag Berlin Heidelberg.
PY - 2016/2/1
Y1 - 2016/2/1
N2 - We prepare Cu/Ni bilayer films by depositing the incident atoms on Cu substrates with various surface orientations and under different temperatures and investigate interfacial structure, surface roughness, radial distribution function and hardness of the films. We find that the incident atoms can penetrate (001) substrate more easily than other surfaces, resulting in a transitional layer consisting of two kinds of atoms. Stacking faults are generated in the bilayer films deposited on the (111) substrate, which can reduce misfit strain and thus account for the layer growth mode of the films. The surface roughness decreases with the increase in deposition temperature. Moreover, we also find that a certain degree of roughness benefits the formation of coherent interface due to the tilted-layer epitaxial growth. The hardness differs for the films deposited at different temperatures.
AB - We prepare Cu/Ni bilayer films by depositing the incident atoms on Cu substrates with various surface orientations and under different temperatures and investigate interfacial structure, surface roughness, radial distribution function and hardness of the films. We find that the incident atoms can penetrate (001) substrate more easily than other surfaces, resulting in a transitional layer consisting of two kinds of atoms. Stacking faults are generated in the bilayer films deposited on the (111) substrate, which can reduce misfit strain and thus account for the layer growth mode of the films. The surface roughness decreases with the increase in deposition temperature. Moreover, we also find that a certain degree of roughness benefits the formation of coherent interface due to the tilted-layer epitaxial growth. The hardness differs for the films deposited at different temperatures.
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U2 - 10.1007/s00339-015-9592-3
DO - 10.1007/s00339-015-9592-3
M3 - Article
AN - SCOPUS:84955274141
VL - 122
SP - 1
EP - 9
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
SN - 0947-8396
IS - 2
M1 - 67
ER -