MBE-STM study of the Ga-rich 4 × 2 phase of the GaAs(001) surface

Qikun Xue, T. Hashizume, J. M. Zhou, T. Sakata, T. Sakurai

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    We studied the atomic structure of the GaAs(001) 4 × 2 and 4 × 6 phases by scanning tunneling microscopy (STM) and determined that both the 4 × 2 c(8 × 2) and 4 × 6 phases are Ga-terminated. The 4 × 2 c(8 × 2) structure can be described better by Biegelsen et al.'s bilayer Ga dimer model than by Skala's As model.

    Original languageEnglish
    Pages (from-to)364-367
    Number of pages4
    JournalApplied Surface Science
    Volume87-88
    Issue numberC
    DOIs
    Publication statusPublished - 1995 Mar 2

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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