MBE-STM study of the Ga-rich 4 × 2 phase of the GaAs(001) surface

Qikun Xue, T. Hashizume, J. M. Zhou, T. Sakata, T. Sakurai

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    5 Citations (Scopus)

    Abstract

    We studied the atomic structure of the GaAs(001) 4 × 2 and 4 × 6 phases by scanning tunneling microscopy (STM) and determined that both the 4 × 2 c(8 × 2) and 4 × 6 phases are Ga-terminated. The 4 × 2 c(8 × 2) structure can be described better by Biegelsen et al.'s bilayer Ga dimer model than by Skala's As model.

    Original languageEnglish
    Pages (from-to)364-367
    Number of pages4
    JournalApplied Surface Science
    Volume87-88
    Issue numberC
    DOIs
    Publication statusPublished - 1995 Mar 2

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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  • Cite this

    Xue, Q., Hashizume, T., Zhou, J. M., Sakata, T., & Sakurai, T. (1995). MBE-STM study of the Ga-rich 4 × 2 phase of the GaAs(001) surface. Applied Surface Science, 87-88(C), 364-367. https://doi.org/10.1016/0169-4332(94)00509-5