MBE growth of InP using polycrystalline InP as phosphorus source

B. X. Yang, H. Ishii, K. Iizuka, H. Hasegawa, H. Ohno

Research output: Contribution to conferencePaper

Abstract

The feasibility of molecular-beam epitaxy (MBE) and migration-enhanced epitaxy (MEE) growth of InP in the standard GaAs-type MBE chamber was demonstrated using polycrystalline InP as the phosphorus source. The substrate was a semi-insulating (Fe-doped) InP substrate with (100) orientation. Prior to growth, the substrate was thermally cleaned either under P2 flux or under As4 flux. The change of the surface structure was detected by the change in the reflection high-energy electron diffraction (RHEED) pattern taken at an acceleration voltage of 14.5 kV. The RHEED intensity oscillation was measured on the specular beam spot, using a videocamera system. InP polycrystal was shown to be suitable for the MEE growth mode, giving a strong enhancement of photoluminescence intensity.

Original languageEnglish
Pages127-130
Number of pages4
DOIs
Publication statusPublished - 1990 Jan 1
Externally publishedYes
EventSecond International Conference on Indium Phosphide and Related Materials - Denver, CO, USA
Duration: 1990 Apr 231990 Apr 25

Other

OtherSecond International Conference on Indium Phosphide and Related Materials
CityDenver, CO, USA
Period90/4/2390/4/25

ASJC Scopus subject areas

  • Engineering(all)

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