MBE growth of β-FeSi2 epitaxial film on hydrogen terminated Si (1 1 1) substrate

S. Y. Ji; G. M. Lalev; J. F. Wang; J. W. Lim; J. H. Yoo; D. Shindo; M. Isshiki

doi:10.1016/j.jcrysgro.2005.07.042

MBE growth of β-FeSi₂ epitaxial film on hydrogen terminated Si (1 1 1) substrate

S. Y. Ji, G. M. Lalev, J. F. Wang, J. W. Lim, J. H. Yoo, D. Shindo, M. Isshiki

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

β-FeSi₂ single crystal epitaxial films were successfully grown on hydrogen terminated Si (1 1 1) substrates by using solid source molecular beam epitaxy (SS-MBE). The β-FeSi₂ epitaxial film with thickness of 180 nm was grown without template-layer or post-growth annealing. By analyzing X-ray diffraction (XRD) patterns and the corresponding scanning electron microscopy (SEM) images, the optimal growth temperature was established to be 580 °C. To study the effect of Fe/Si ratio on the film quality, a series of epilayers were grown at 580 °C with various Fe/Si ratios from 2 to 0.4. The stoichiometric Fe/Si flux ratio of 0.5 was confirmed to be an essential condition to grow single crystalline β-FeSi₂ epitaxial films at 580 °C, while the metallic ε-FeSi phase grew predominantly at 480 °C. The observations of transmission electron microscope (TEM) and reflective high-energy electron diffraction (RHEED) verified the epitaxial growth of β-FeSi₂ films on Si (1 1 1).

Original language	English
Pages (from-to)	284-294
Number of pages	11
Journal	Journal of Crystal Growth
Volume	285
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.07.042
Publication status	Published - 2005 Nov 15
Externally published	Yes

Keywords

A1. Reflective high-energy electron diffraction
A3. Molecular beam epitaxy
B2. Semiconducting silicon compounds

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2005.07.042

Cite this

@article{70da45a2d6704448ad6ba90d29ceae98,

title = "MBE growth of β-FeSi2 epitaxial film on hydrogen terminated Si (1 1 1) substrate",

abstract = "β-FeSi2 single crystal epitaxial films were successfully grown on hydrogen terminated Si (1 1 1) substrates by using solid source molecular beam epitaxy (SS-MBE). The β-FeSi2 epitaxial film with thickness of 180 nm was grown without template-layer or post-growth annealing. By analyzing X-ray diffraction (XRD) patterns and the corresponding scanning electron microscopy (SEM) images, the optimal growth temperature was established to be 580 °C. To study the effect of Fe/Si ratio on the film quality, a series of epilayers were grown at 580 °C with various Fe/Si ratios from 2 to 0.4. The stoichiometric Fe/Si flux ratio of 0.5 was confirmed to be an essential condition to grow single crystalline β-FeSi2 epitaxial films at 580 °C, while the metallic ε-FeSi phase grew predominantly at 480 °C. The observations of transmission electron microscope (TEM) and reflective high-energy electron diffraction (RHEED) verified the epitaxial growth of β-FeSi2 films on Si (1 1 1).",

keywords = "A1. Reflective high-energy electron diffraction, A3. Molecular beam epitaxy, B2. Semiconducting silicon compounds",

author = "Ji, {S. Y.} and Lalev, {G. M.} and Wang, {J. F.} and Lim, {J. W.} and Yoo, {J. H.} and D. Shindo and M. Isshiki",

note = "Funding Information: This research was partially supported by the Ministry of Education, Science, Sports and Culture, Grant-in-Aid Scientific Research, 14350394, 2003.",

year = "2005",

month = nov,

day = "15",

doi = "10.1016/j.jcrysgro.2005.07.042",

language = "English",

volume = "285",

pages = "284--294",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-2",

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TY - JOUR

T1 - MBE growth of β-FeSi2 epitaxial film on hydrogen terminated Si (1 1 1) substrate

AU - Ji, S. Y.

AU - Lalev, G. M.

AU - Wang, J. F.

AU - Lim, J. W.

AU - Yoo, J. H.

AU - Shindo, D.

AU - Isshiki, M.

N1 - Funding Information: This research was partially supported by the Ministry of Education, Science, Sports and Culture, Grant-in-Aid Scientific Research, 14350394, 2003.

PY - 2005/11/15

Y1 - 2005/11/15

N2 - β-FeSi2 single crystal epitaxial films were successfully grown on hydrogen terminated Si (1 1 1) substrates by using solid source molecular beam epitaxy (SS-MBE). The β-FeSi2 epitaxial film with thickness of 180 nm was grown without template-layer or post-growth annealing. By analyzing X-ray diffraction (XRD) patterns and the corresponding scanning electron microscopy (SEM) images, the optimal growth temperature was established to be 580 °C. To study the effect of Fe/Si ratio on the film quality, a series of epilayers were grown at 580 °C with various Fe/Si ratios from 2 to 0.4. The stoichiometric Fe/Si flux ratio of 0.5 was confirmed to be an essential condition to grow single crystalline β-FeSi2 epitaxial films at 580 °C, while the metallic ε-FeSi phase grew predominantly at 480 °C. The observations of transmission electron microscope (TEM) and reflective high-energy electron diffraction (RHEED) verified the epitaxial growth of β-FeSi2 films on Si (1 1 1).

AB - β-FeSi2 single crystal epitaxial films were successfully grown on hydrogen terminated Si (1 1 1) substrates by using solid source molecular beam epitaxy (SS-MBE). The β-FeSi2 epitaxial film with thickness of 180 nm was grown without template-layer or post-growth annealing. By analyzing X-ray diffraction (XRD) patterns and the corresponding scanning electron microscopy (SEM) images, the optimal growth temperature was established to be 580 °C. To study the effect of Fe/Si ratio on the film quality, a series of epilayers were grown at 580 °C with various Fe/Si ratios from 2 to 0.4. The stoichiometric Fe/Si flux ratio of 0.5 was confirmed to be an essential condition to grow single crystalline β-FeSi2 epitaxial films at 580 °C, while the metallic ε-FeSi phase grew predominantly at 480 °C. The observations of transmission electron microscope (TEM) and reflective high-energy electron diffraction (RHEED) verified the epitaxial growth of β-FeSi2 films on Si (1 1 1).

KW - A1. Reflective high-energy electron diffraction

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting silicon compounds

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