MBE growth of β-FeSi2 epitaxial film on hydrogen terminated Si (1 1 1) substrate

S. Y. Ji, G. M. Lalev, J. F. Wang, J. W. Lim, J. H. Yoo, D. Shindo, M. Isshiki

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    9 Citations (Scopus)

    Abstract

    β-FeSi2 single crystal epitaxial films were successfully grown on hydrogen terminated Si (1 1 1) substrates by using solid source molecular beam epitaxy (SS-MBE). The β-FeSi2 epitaxial film with thickness of 180 nm was grown without template-layer or post-growth annealing. By analyzing X-ray diffraction (XRD) patterns and the corresponding scanning electron microscopy (SEM) images, the optimal growth temperature was established to be 580 °C. To study the effect of Fe/Si ratio on the film quality, a series of epilayers were grown at 580 °C with various Fe/Si ratios from 2 to 0.4. The stoichiometric Fe/Si flux ratio of 0.5 was confirmed to be an essential condition to grow single crystalline β-FeSi2 epitaxial films at 580 °C, while the metallic ε-FeSi phase grew predominantly at 480 °C. The observations of transmission electron microscope (TEM) and reflective high-energy electron diffraction (RHEED) verified the epitaxial growth of β-FeSi2 films on Si (1 1 1).

    Original languageEnglish
    Pages (from-to)284-294
    Number of pages11
    JournalJournal of Crystal Growth
    Volume285
    Issue number1-2
    DOIs
    Publication statusPublished - 2005 Nov 15

    Keywords

    • A1. Reflective high-energy electron diffraction
    • A3. Molecular beam epitaxy
    • B2. Semiconducting silicon compounds

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Inorganic Chemistry
    • Materials Chemistry

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