Abstract
Micro crystals of GaAs which were pyramid-shaped and 35 nm in bottom length were grown epitaxially on a ZnSe(001) surface by using As-incorporated growth into Ga droplets for the first time. These micro crystals consisted of (111) facets. The size distribution was controlled within 16% in deviation. The As-incorporated lateral growth of GaAs was not observed. A newly proposed method was thought to be useful in fabricating quantum well boxes.
| Original language | English |
|---|---|
| Pages (from-to) | L2093-L2095 |
| Journal | Japanese journal of applied physics |
| Volume | 29 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1990 Nov |
| Externally published | Yes |
Keywords
- As-incorporated growth
- Ga droplet
- Molecular beam epitaxy
- Quantum well boxes
- ZnSe, GaAs, facet
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Chikyow, T., & Koguchi, N. (1990). MBE Growth Method for Pyramid-Shaped GaAs Micro Crystals on ZnSe(001) Surface Using Ga Droplets. Japanese journal of applied physics, 29(11), L2093-L2095. https://doi.org/10.1143/JJAP.29.L2093