MBE Growth Method for Pyramid-Shaped GaAs Micro Crystals on ZnSe(001) Surface Using Ga Droplets

Toyohiro Chikyow, Nobuyuki Koguchi

Research output: Contribution to journalArticle

66 Citations (Scopus)

Abstract

Micro crystals of GaAs which were pyramid-shaped and 35 nm in bottom length were grown epitaxially on a ZnSe(001) surface by using As-incorporated growth into Ga droplets for the first time. These micro crystals consisted of (111) facets. The size distribution was controlled within 16% in deviation. The As-incorporated lateral growth of GaAs was not observed. A newly proposed method was thought to be useful in fabricating quantum well boxes.

Original languageEnglish
Pages (from-to)L2093-L2095
JournalJapanese journal of applied physics
Volume29
Issue number11
DOIs
Publication statusPublished - 1990 Nov
Externally publishedYes

Keywords

  • As-incorporated growth
  • Ga droplet
  • Molecular beam epitaxy
  • Quantum well boxes
  • ZnSe, GaAs, facet

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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