MBE Growth Method for Pyramid-Shaped GaAs Micro Crystals on ZnSe(001) Surface Using Ga Droplets

Toyohiro Chikyow; Nobuyuki Koguchi

doi:10.1143/JJAP.29.L2093

MBE Growth Method for Pyramid-Shaped GaAs Micro Crystals on ZnSe(001) Surface Using Ga Droplets

Toyohiro Chikyow, Nobuyuki Koguchi

Research output: Contribution to journal › Article › peer-review

67 Citations (Scopus)

Abstract

Micro crystals of GaAs which were pyramid-shaped and 35 nm in bottom length were grown epitaxially on a ZnSe(001) surface by using As-incorporated growth into Ga droplets for the first time. These micro crystals consisted of (111) facets. The size distribution was controlled within 16% in deviation. The As-incorporated lateral growth of GaAs was not observed. A newly proposed method was thought to be useful in fabricating quantum well boxes.

Original language	English
Pages (from-to)	L2093-L2095
Journal	Japanese journal of applied physics
Volume	29
Issue number	11
DOIs	https://doi.org/10.1143/JJAP.29.L2093
Publication status	Published - 1990 Nov
Externally published	Yes

Keywords

As-incorporated growth
Ga droplet
Molecular beam epitaxy
Quantum well boxes
ZnSe, GaAs, facet

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "Micro crystals of GaAs which were pyramid-shaped and 35 nm in bottom length were grown epitaxially on a ZnSe(001) surface by using As-incorporated growth into Ga droplets for the first time. These micro crystals consisted of (111) facets. The size distribution was controlled within 16% in deviation. The As-incorporated lateral growth of GaAs was not observed. A newly proposed method was thought to be useful in fabricating quantum well boxes.",

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author = "Toyohiro Chikyow and Nobuyuki Koguchi",

year = "1990",

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Y1 - 1990/11

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AB - Micro crystals of GaAs which were pyramid-shaped and 35 nm in bottom length were grown epitaxially on a ZnSe(001) surface by using As-incorporated growth into Ga droplets for the first time. These micro crystals consisted of (111) facets. The size distribution was controlled within 16% in deviation. The As-incorporated lateral growth of GaAs was not observed. A newly proposed method was thought to be useful in fabricating quantum well boxes.

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KW - Molecular beam epitaxy

KW - Quantum well boxes

KW - ZnSe, GaAs, facet

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