TY - GEN
T1 - MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs [001]
AU - Nishikawa, A.
AU - Katayama, R.
AU - Onabe, K.
AU - Shiraki, Y.
N1 - Publisher Copyright:
© 2002 IEEE.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2002
Y1 - 2002
N2 - The GaAsN alloy has attracted much attention due to the scientific interest for the huge bandgap bowing as well as the technological importance for optoelectronic devices. The study of the bandgap energy for the higher N contents, however, is scarcely reported because of the extreme immiscibility. In this work, the bandgap energy and its temperature dependence of GaAsN (N=0-4.5%) alloy films have been investigated by photoreflectance (PR) spectroscopy.
AB - The GaAsN alloy has attracted much attention due to the scientific interest for the huge bandgap bowing as well as the technological importance for optoelectronic devices. The study of the bandgap energy for the higher N contents, however, is scarcely reported because of the extreme immiscibility. In this work, the bandgap energy and its temperature dependence of GaAsN (N=0-4.5%) alloy films have been investigated by photoreflectance (PR) spectroscopy.
UR - http://www.scopus.com/inward/record.url?scp=84968543919&partnerID=8YFLogxK
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U2 - 10.1109/MBE.2002.1037803
DO - 10.1109/MBE.2002.1037803
M3 - Conference contribution
AN - SCOPUS:84968543919
T3 - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
SP - 149
EP - 150
BT - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 12th International Conference on Molecular Beam Epitaxy, MBE 2002
Y2 - 15 September 2002 through 20 September 2002
ER -