MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs [001]

A. Nishikawa, R. Katayama, K. Onabe, Y. Shiraki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The GaAsN alloy has attracted much attention due to the scientific interest for the huge bandgap bowing as well as the technological importance for optoelectronic devices. The study of the bandgap energy for the higher N contents, however, is scarcely reported because of the extreme immiscibility. In this work, the bandgap energy and its temperature dependence of GaAsN (N=0-4.5%) alloy films have been investigated by photoreflectance (PR) spectroscopy.

Original languageEnglish
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages149-150
Number of pages2
ISBN (Electronic)0780375815, 9780780375819
DOIs
Publication statusPublished - 2002
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: 2002 Sep 152002 Sep 20

Publication series

NameMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Other

Other12th International Conference on Molecular Beam Epitaxy, MBE 2002
CountryUnited States
CitySan Francisco
Period02/9/1502/9/20

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Fingerprint Dive into the research topics of 'MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs [001]'. Together they form a unique fingerprint.

Cite this