TY - JOUR
T1 - MBE growth and electroluminescence of ferromagnetic/non-magnetic semiconductor pn junctions based on (Ga,Mn)As
AU - Ohno, Y.
AU - Arata, I.
AU - Matsukura, F.
AU - Ohtani, K.
AU - Wang, S.
AU - Ohno, H.
N1 - Funding Information:
This work was partly supported by “Research for the Future Program” from the Japan Society for the Promotion of Science (JSPS-RFTF 97P00202), Grant-in-Aids for the Scientific Research from the Ministry of Education, Science, Sports and Culture, Japan (No. 09244103 and No. 11650002), and Murata foundation.
PY - 2000/6
Y1 - 2000/6
N2 - Molecular beam epitaxial (MBE) growth of novel hybrid ferromagnetic/non-magnetic semiconductor pn junction light emitting diodes (LEDs) is presented. The ferromagnetic p-type (Ga,Mn)As layers were grown on i-(In,Ga)As/n-GaAs structures to form LED structures. The current-voltage (I-V) characteristics and the electroluminescence (EL) spectra were measured at temperatures from 5 K to room temperature. In comparison to the properties of control samples consisting of all non-magnetic p-GaAs/(In,Ga)As/n-GaAs LEDs, the EL intensity of ferromagnetic/non-magnetic pn junction LEDs exhibited unique temperature dependence.
AB - Molecular beam epitaxial (MBE) growth of novel hybrid ferromagnetic/non-magnetic semiconductor pn junction light emitting diodes (LEDs) is presented. The ferromagnetic p-type (Ga,Mn)As layers were grown on i-(In,Ga)As/n-GaAs structures to form LED structures. The current-voltage (I-V) characteristics and the electroluminescence (EL) spectra were measured at temperatures from 5 K to room temperature. In comparison to the properties of control samples consisting of all non-magnetic p-GaAs/(In,Ga)As/n-GaAs LEDs, the EL intensity of ferromagnetic/non-magnetic pn junction LEDs exhibited unique temperature dependence.
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U2 - 10.1016/S0169-4332(00)00107-0
DO - 10.1016/S0169-4332(00)00107-0
M3 - Conference article
AN - SCOPUS:0034206163
SN - 0169-4332
VL - 159
SP - 308
EP - 312
JO - Applied Surface Science
JF - Applied Surface Science
T2 - 3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3)
Y2 - 25 October 1999 through 29 October 1999
ER -