MBE growth and electroluminescence of ferromagnetic/non-magnetic semiconductor pn junctions based on (Ga,Mn)As

Y. Ohno, I. Arata, F. Matsukura, K. Ohtani, S. Wang, H. Ohno

Research output: Contribution to journalConference articlepeer-review

22 Citations (Scopus)

Abstract

Molecular beam epitaxial (MBE) growth of novel hybrid ferromagnetic/non-magnetic semiconductor pn junction light emitting diodes (LEDs) is presented. The ferromagnetic p-type (Ga,Mn)As layers were grown on i-(In,Ga)As/n-GaAs structures to form LED structures. The current-voltage (I-V) characteristics and the electroluminescence (EL) spectra were measured at temperatures from 5 K to room temperature. In comparison to the properties of control samples consisting of all non-magnetic p-GaAs/(In,Ga)As/n-GaAs LEDs, the EL intensity of ferromagnetic/non-magnetic pn junction LEDs exhibited unique temperature dependence.

Original languageEnglish
Pages (from-to)308-312
Number of pages5
JournalApplied Surface Science
Volume159
DOIs
Publication statusPublished - 2000 Jun
Event3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3) - Karuizawa, Jpn
Duration: 1999 Oct 251999 Oct 29

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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