MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

Taizo Nakasu, Wei Che Sun, Sotaro Yamashita, Takayuki Aiba, Kosuke Taguri, Masakazu Kobayashi, Toshiaki Asahi, Hiroyoshi Togo

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9 Citations (Scopus)

Abstract

ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2°-tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers.

Original languageEnglish
Pages (from-to)1182-1185
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume11
Issue number7-8
DOIs
Publication statusPublished - 2014 Jul

Keywords

  • Heteroepitaxy
  • Molecular beam epitaxy
  • Pole figure
  • Sapphire
  • ZnTe

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Nakasu, T., Sun, W. C., Yamashita, S., Aiba, T., Taguri, K., Kobayashi, M., Asahi, T., & Togo, H. (2014). MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates. Physica Status Solidi (C) Current Topics in Solid State Physics, 11(7-8), 1182-1185. https://doi.org/10.1002/pssc.201300582