Material innovation for MOL, BEOL, and 3D integration

J. Koike, M. Hosseini, H. T. Hai, D. Ando, Y. Sutou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents new materials and processes for advanced technology node of Si semiconductor devices. For MOL, Co contact plug and amorphous Co-Ti barrier showed a good adhesion, limited growth of Co silicide, and a low contact resistivity of the order of 10-9 Ωcm2 on both n+ and p+ Si. For BEOL, a CVD-MnOx layer could be formed conformally in high-aspect ratio contact holes. The ALD-MnOx layer of 1.2 nm thick showed a good diffusion barrier property at 400 °C. For 3D integration, TSV of 10 μm diameter and 80 μm depth could be filled with low resistivity sintered Cu paste without voids.

Original languageEnglish
Title of host publication2017 IEEE International Electron Devices Meeting, IEDM 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages32.3.1-32.3.4
ISBN (Electronic)9781538635599
DOIs
Publication statusPublished - 2018 Jan 23
Event63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States
Duration: 2017 Dec 22017 Dec 6

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other63rd IEEE International Electron Devices Meeting, IEDM 2017
CountryUnited States
CitySan Francisco
Period17/12/217/12/6

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Koike, J., Hosseini, M., Hai, H. T., Ando, D., & Sutou, Y. (2018). Material innovation for MOL, BEOL, and 3D integration. In 2017 IEEE International Electron Devices Meeting, IEDM 2017 (pp. 32.3.1-32.3.4). (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2017.8268485