Maskless selective growth of semi-polar (1 12̄ 2) GaN on Si (3 1 1) substrate by metal organic vapor phase epitaxy

Min Yang, Hyung Soo Ahn, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Semi-polar (1 1 2̄ 2) GaN layers were selectively grown by metal organic chemical vapor phase epitaxy on patterned Si (3 1 1) substrates without SiO2 amorphous mask. The (1 1 2̄ 2) GaN layers could be selectively grown only on Si (1 1 1) facets when the stripe mask width was narrower than 1 μm even without SiO2. Inhomogeneous spatial distribution of donor bound exciton (DBE) peak in low-temperature cathodoluminescence (CL) spectra was explained by the difference of growth mode before and after the coalescence of stripes. It was found that the emission intensity related crystal defects is drastically decreased in case of selective growth without SiO2 masks as compared to that obtained with SiO2 masks.

Original languageEnglish
Pages (from-to)2914-2918
Number of pages5
JournalJournal of Crystal Growth
Volume311
Issue number10
DOIs
Publication statusPublished - 2009 May 1

Keywords

  • A1. Defects
  • A3. Metalorganic vapor phase epitaxy
  • A3. Selective epitaxy
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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