Manifestation of local magnetic domain reversal by spin-polarized carrier injection in (Ga,Mn)As thin films

A. Oiwa, R. Moriya, Y. Mitsumori, T. Słupinski, H. Munekata

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Recently, we have reported that the spin-polarized holes generated by the irradiation with circularly polarized light can change the magnetization orientation of III-V ferromagnetic semiconductor (Ga,Mn) As via p-d exchange interaction. In this paper, we report that a small portion of change does not return to the initial state after the light is turned off. This residual component, named as the memorization effect, exhibits ferromagnetic characteristics. This fact strongly suggests that small magnetic domains having the perpendicular magnetic axis are rotated by photogenerated carrier spins.

Original languageEnglish
Pages (from-to)439-442
Number of pages4
JournalJournal of Superconductivity and Novel Magnetism
Volume16
Issue number2
Publication statusPublished - 2003
Externally publishedYes

Keywords

  • Ferromagnetic semiconductors
  • Magnetic domain
  • Magnetization switching
  • Spin injection

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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