TY - JOUR
T1 - Majority-carrier mobilities in undoped and n-type doped ZnO epitaxial layers
AU - Makino, T.
AU - Segawa, Y.
AU - Tsukazaki, A.
AU - Ohtomo, A.
AU - Kawasaki, M.
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2006
Y1 - 2006
N2 - Transparent and conductive ZnO:Ga thin films are prepared by laser molecular-beam epitaxy. Their electron properties were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were about ns ∼ 1016 cm-3 and 440 cm2/Vs, respectively. In the experimental 'mobility vs concentration' curve, unusual phenomenon was observed, i.e., mobilities at ns ∼ 5× 1018 cm-3 are significantly smaller than those at higher densities above ∼ 1020 cm-3. Several types of scattering centers including ionized donors and oxygen traps are considered to account for the observed dependence of the Hall mobility on carrier concentration. The scattering mechanism is explained in terms of inter-grain potential barriers and charged impurities. A comparison between theoretical results and experimental data is made.
AB - Transparent and conductive ZnO:Ga thin films are prepared by laser molecular-beam epitaxy. Their electron properties were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were about ns ∼ 1016 cm-3 and 440 cm2/Vs, respectively. In the experimental 'mobility vs concentration' curve, unusual phenomenon was observed, i.e., mobilities at ns ∼ 5× 1018 cm-3 are significantly smaller than those at higher densities above ∼ 1020 cm-3. Several types of scattering centers including ionized donors and oxygen traps are considered to account for the observed dependence of the Hall mobility on carrier concentration. The scattering mechanism is explained in terms of inter-grain potential barriers and charged impurities. A comparison between theoretical results and experimental data is made.
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U2 - 10.1002/pssc.200564636
DO - 10.1002/pssc.200564636
M3 - Conference article
AN - SCOPUS:33646263352
VL - 3
SP - 956
EP - 959
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1610-1634
IS - 4
T2 - 12th International Conference on II-VI Compounds
Y2 - 12 September 2005 through 16 September 2005
ER -