Majority-carrier mobilities in undoped and n-type doped ZnO epitaxial layers

T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, M. Kawasaki

Research output: Contribution to journalConference articlepeer-review

12 Citations (Scopus)

Abstract

Transparent and conductive ZnO:Ga thin films are prepared by laser molecular-beam epitaxy. Their electron properties were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were about ns ∼ 1016 cm-3 and 440 cm2/Vs, respectively. In the experimental 'mobility vs concentration' curve, unusual phenomenon was observed, i.e., mobilities at ns ∼ 5× 1018 cm-3 are significantly smaller than those at higher densities above ∼ 1020 cm-3. Several types of scattering centers including ionized donors and oxygen traps are considered to account for the observed dependence of the Hall mobility on carrier concentration. The scattering mechanism is explained in terms of inter-grain potential barriers and charged impurities. A comparison between theoretical results and experimental data is made.

Original languageEnglish
Pages (from-to)956-959
Number of pages4
JournalPhysica Status Solidi C: Conferences
Volume3
Issue number4
DOIs
Publication statusPublished - 2006
Event12th International Conference on II-VI Compounds - Warsaw, Poland
Duration: 2005 Sep 122005 Sep 16

ASJC Scopus subject areas

  • Condensed Matter Physics

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