Major impacts of point defects and impurities on the carrier recombination dynamics in AlN

S. F. Chichibu; T. Onuma; K. Hazu; A. Uedono

doi:10.1063/1.3517484

Major impacts of point defects and impurities on the carrier recombination dynamics in AlN

S. F. Chichibu, T. Onuma, K. Hazu, A. Uedono

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31 Citations (Scopus)

Abstract

Impacts of point defects and impurities on the carrier recombination dynamics in AlN are revealed by time-resolved spectroscopy and positron annihilation measurements. Intrinsically short low-temperature excitonic radiative lifetime (τ_R ∼10 ps) was elongated with the increase in Al-vacancy concentration up to 530 ps, irrespective of threading dislocation density. A continuous decrease in τ_R with temperature rise up to 200 K for heavily doped samples revealed the carrier release from the band-tail formed due to impurities and point defects. Because room-temperature nonradiative lifetime was equally short for all samples, high temperature growth with appropriate defect management is necessary in extracting radiative nature of AlN.

Original language	English
Article number	201904
Journal	Applied Physics Letters
Volume	97
Issue number	20
DOIs	https://doi.org/10.1063/1.3517484
Publication status	Published - 2010 Nov 15

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3517484

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title = "Major impacts of point defects and impurities on the carrier recombination dynamics in AlN",

abstract = "Impacts of point defects and impurities on the carrier recombination dynamics in AlN are revealed by time-resolved spectroscopy and positron annihilation measurements. Intrinsically short low-temperature excitonic radiative lifetime (τR ∼10 ps) was elongated with the increase in Al-vacancy concentration up to 530 ps, irrespective of threading dislocation density. A continuous decrease in τR with temperature rise up to 200 K for heavily doped samples revealed the carrier release from the band-tail formed due to impurities and point defects. Because room-temperature nonradiative lifetime was equally short for all samples, high temperature growth with appropriate defect management is necessary in extracting radiative nature of AlN.",

author = "Chichibu, {S. F.} and T. Onuma and K. Hazu and A. Uedono",

note = "Funding Information: The authors thank Professor T. Sota and Dr. M. Tanaka for fruitful discussions. They also thank Mitsubishi Chemical Holdings Group for providing -plane GaN substrates. This work was supported in part by NEDO programs by METI and Grant-in-Aids of Scientific Research in Priority Area No. 18069001 under MEXT, Japan.",

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T1 - Major impacts of point defects and impurities on the carrier recombination dynamics in AlN

AU - Chichibu, S. F.

AU - Onuma, T.

AU - Hazu, K.

AU - Uedono, A.

N1 - Funding Information: The authors thank Professor T. Sota and Dr. M. Tanaka for fruitful discussions. They also thank Mitsubishi Chemical Holdings Group for providing -plane GaN substrates. This work was supported in part by NEDO programs by METI and Grant-in-Aids of Scientific Research in Priority Area No. 18069001 under MEXT, Japan.

PY - 2010/11/15

Y1 - 2010/11/15

N2 - Impacts of point defects and impurities on the carrier recombination dynamics in AlN are revealed by time-resolved spectroscopy and positron annihilation measurements. Intrinsically short low-temperature excitonic radiative lifetime (τR ∼10 ps) was elongated with the increase in Al-vacancy concentration up to 530 ps, irrespective of threading dislocation density. A continuous decrease in τR with temperature rise up to 200 K for heavily doped samples revealed the carrier release from the band-tail formed due to impurities and point defects. Because room-temperature nonradiative lifetime was equally short for all samples, high temperature growth with appropriate defect management is necessary in extracting radiative nature of AlN.

AB - Impacts of point defects and impurities on the carrier recombination dynamics in AlN are revealed by time-resolved spectroscopy and positron annihilation measurements. Intrinsically short low-temperature excitonic radiative lifetime (τR ∼10 ps) was elongated with the increase in Al-vacancy concentration up to 530 ps, irrespective of threading dislocation density. A continuous decrease in τR with temperature rise up to 200 K for heavily doped samples revealed the carrier release from the band-tail formed due to impurities and point defects. Because room-temperature nonradiative lifetime was equally short for all samples, high temperature growth with appropriate defect management is necessary in extracting radiative nature of AlN.

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Major impacts of point defects and impurities on the carrier recombination dynamics in AlN

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