Abstract
Impacts of point defects and impurities on the carrier recombination dynamics in AlN are revealed by time-resolved spectroscopy and positron annihilation measurements. Intrinsically short low-temperature excitonic radiative lifetime (τR ∼10 ps) was elongated with the increase in Al-vacancy concentration up to 530 ps, irrespective of threading dislocation density. A continuous decrease in τR with temperature rise up to 200 K for heavily doped samples revealed the carrier release from the band-tail formed due to impurities and point defects. Because room-temperature nonradiative lifetime was equally short for all samples, high temperature growth with appropriate defect management is necessary in extracting radiative nature of AlN.
Original language | English |
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Article number | 201904 |
Journal | Applied Physics Letters |
Volume | 97 |
Issue number | 20 |
DOIs | |
Publication status | Published - 2010 Nov 15 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)