Magnitude and sign control of lithography-induced uniaxial anisotropy in ultra-thin (Ga,Mn)As wires

J. Shiogai; D. Schuh; W. Wegscheider; M. Kohda; J. Nitta; D. Weiss

doi:10.1063/1.3556556

Magnitude and sign control of lithography-induced uniaxial anisotropy in ultra-thin (Ga,Mn)As wires

J. Shiogai, D. Schuh, W. Wegscheider, M. Kohda, J. Nitta, D. Weiss

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We were able to control the magnitude and sign of the uniaxial anisotropy in 5-nm-thin (Ga,Mn)As wires by changing the crystallographic direction of the lithography-induced strain relaxation. The 1-μm -wide (Ga,Mn)As wires, oriented in [110] and [110] directions, were fabricated using electron beam lithography. Their magnetic anisotropies were studied by a coherent rotation method at temperatures between 4.5 and 75 K. Depending on the orientation of the wire, the additional uniaxial anisotropy observed along the axis of the 1-μm -wide samples either increased or decreased the total uniaxial anisotropy.

Original language	English
Article number	083101
Journal	Applied Physics Letters
Volume	98
Issue number	8
DOIs	https://doi.org/10.1063/1.3556556
Publication status	Published - 2011 Feb 21

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3556556

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title = "Magnitude and sign control of lithography-induced uniaxial anisotropy in ultra-thin (Ga,Mn)As wires",

abstract = "We were able to control the magnitude and sign of the uniaxial anisotropy in 5-nm-thin (Ga,Mn)As wires by changing the crystallographic direction of the lithography-induced strain relaxation. The 1-μm -wide (Ga,Mn)As wires, oriented in [110] and [110] directions, were fabricated using electron beam lithography. Their magnetic anisotropies were studied by a coherent rotation method at temperatures between 4.5 and 75 K. Depending on the orientation of the wire, the additional uniaxial anisotropy observed along the axis of the 1-μm -wide samples either increased or decreased the total uniaxial anisotropy.",

author = "J. Shiogai and D. Schuh and W. Wegscheider and M. Kohda and J. Nitta and D. Weiss",

note = "Funding Information: This work was partly supported by German Science Foundation (DFG) via SFB 689, the Japan–Germany Strategic International Cooperative Program (Joint Research Type) from JST, and Grants-in-Aid from JSPS, MEXT. The authors thank D. Chiba for useful discussion.",

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T1 - Magnitude and sign control of lithography-induced uniaxial anisotropy in ultra-thin (Ga,Mn)As wires

AU - Shiogai, J.

AU - Schuh, D.

AU - Wegscheider, W.

AU - Kohda, M.

AU - Nitta, J.

AU - Weiss, D.

N1 - Funding Information: This work was partly supported by German Science Foundation (DFG) via SFB 689, the Japan–Germany Strategic International Cooperative Program (Joint Research Type) from JST, and Grants-in-Aid from JSPS, MEXT. The authors thank D. Chiba for useful discussion.

PY - 2011/2/21

Y1 - 2011/2/21

N2 - We were able to control the magnitude and sign of the uniaxial anisotropy in 5-nm-thin (Ga,Mn)As wires by changing the crystallographic direction of the lithography-induced strain relaxation. The 1-μm -wide (Ga,Mn)As wires, oriented in [110] and [110] directions, were fabricated using electron beam lithography. Their magnetic anisotropies were studied by a coherent rotation method at temperatures between 4.5 and 75 K. Depending on the orientation of the wire, the additional uniaxial anisotropy observed along the axis of the 1-μm -wide samples either increased or decreased the total uniaxial anisotropy.

AB - We were able to control the magnitude and sign of the uniaxial anisotropy in 5-nm-thin (Ga,Mn)As wires by changing the crystallographic direction of the lithography-induced strain relaxation. The 1-μm -wide (Ga,Mn)As wires, oriented in [110] and [110] directions, were fabricated using electron beam lithography. Their magnetic anisotropies were studied by a coherent rotation method at temperatures between 4.5 and 75 K. Depending on the orientation of the wire, the additional uniaxial anisotropy observed along the axis of the 1-μm -wide samples either increased or decreased the total uniaxial anisotropy.

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Magnitude and sign control of lithography-induced uniaxial anisotropy in ultra-thin (Ga,Mn)As wires

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