Magnitude and sign control of lithography-induced uniaxial anisotropy in ultra-thin (Ga,Mn)As wires

J. Shiogai, D. Schuh, W. Wegscheider, M. Kohda, J. Nitta, D. Weiss

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We were able to control the magnitude and sign of the uniaxial anisotropy in 5-nm-thin (Ga,Mn)As wires by changing the crystallographic direction of the lithography-induced strain relaxation. The 1-μm -wide (Ga,Mn)As wires, oriented in [110] and [110] directions, were fabricated using electron beam lithography. Their magnetic anisotropies were studied by a coherent rotation method at temperatures between 4.5 and 75 K. Depending on the orientation of the wire, the additional uniaxial anisotropy observed along the axis of the 1-μm -wide samples either increased or decreased the total uniaxial anisotropy.

Original languageEnglish
Article number083101
JournalApplied Physics Letters
Volume98
Issue number8
DOIs
Publication statusPublished - 2011 Feb 21

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Magnitude and sign control of lithography-induced uniaxial anisotropy in ultra-thin (Ga,Mn)As wires'. Together they form a unique fingerprint.

Cite this