Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain

F. Matsukura; M. Sawicki; T. Dietl; D. Chiba; H. Ohno

doi:10.1016/j.physe.2003.11.165

Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain

F. Matsukura, M. Sawicki, T. Dietl, D. Chiba, H. Ohno

Research output: Contribution to journal › Conference article › peer-review

120 Citations (Scopus)

Abstract

Hall and sheet resistance of 200-nm thick metallic (Ga,Mn)As with compressive and tensile strain has been measured as a function of the magnetic field and temperature. The magnitude of resistance is found to depend rather strongly on relative orientations of magnetization and current and their directions in respect to crystal axes, the configuration corresponding to the highest resistance being different for compressive and tensile strain. Negative magnetoresistance, which is observed even if magnetization becomes saturated, is assigned to weak localization.

Original language	English
Pages (from-to)	1032-1036
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	21
Issue number	2-4
DOIs	https://doi.org/10.1016/j.physe.2003.11.165
Publication status	Published - 2004 Mar 1
Event	Proceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan Duration: 2003 Jul 14 → 2003 Jul 18

Keywords

(Ga
Ferromagnetic semiconductors
Magnetic anisotropy
Magnetoresistance
Mn)As
Weak localization

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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title = "Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain",

abstract = "Hall and sheet resistance of 200-nm thick metallic (Ga,Mn)As with compressive and tensile strain has been measured as a function of the magnetic field and temperature. The magnitude of resistance is found to depend rather strongly on relative orientations of magnetization and current and their directions in respect to crystal axes, the configuration corresponding to the highest resistance being different for compressive and tensile strain. Negative magnetoresistance, which is observed even if magnetization becomes saturated, is assigned to weak localization.",

keywords = "(Ga, Ferromagnetic semiconductors, Magnetic anisotropy, Magnetoresistance, Mn)As, Weak localization",

author = "F. Matsukura and M. Sawicki and T. Dietl and D. Chiba and H. Ohno",

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language = "English",

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TY - JOUR

T1 - Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain

AU - Matsukura, F.

AU - Sawicki, M.

AU - Dietl, T.

AU - Chiba, D.

AU - Ohno, H.

PY - 2004/3/1

Y1 - 2004/3/1

N2 - Hall and sheet resistance of 200-nm thick metallic (Ga,Mn)As with compressive and tensile strain has been measured as a function of the magnetic field and temperature. The magnitude of resistance is found to depend rather strongly on relative orientations of magnetization and current and their directions in respect to crystal axes, the configuration corresponding to the highest resistance being different for compressive and tensile strain. Negative magnetoresistance, which is observed even if magnetization becomes saturated, is assigned to weak localization.

AB - Hall and sheet resistance of 200-nm thick metallic (Ga,Mn)As with compressive and tensile strain has been measured as a function of the magnetic field and temperature. The magnitude of resistance is found to depend rather strongly on relative orientations of magnetization and current and their directions in respect to crystal axes, the configuration corresponding to the highest resistance being different for compressive and tensile strain. Negative magnetoresistance, which is observed even if magnetization becomes saturated, is assigned to weak localization.

KW - (Ga

KW - Ferromagnetic semiconductors

KW - Magnetic anisotropy

KW - Magnetoresistance

KW - Mn)As

KW - Weak localization

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DO - 10.1016/j.physe.2003.11.165

M3 - Conference article

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SP - 1032

EP - 1036

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

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