Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain

F. Matsukura, M. Sawicki, T. Dietl, D. Chiba, H. Ohno

Research output: Contribution to journalConference articlepeer-review

123 Citations (Scopus)

Abstract

Hall and sheet resistance of 200-nm thick metallic (Ga,Mn)As with compressive and tensile strain has been measured as a function of the magnetic field and temperature. The magnitude of resistance is found to depend rather strongly on relative orientations of magnetization and current and their directions in respect to crystal axes, the configuration corresponding to the highest resistance being different for compressive and tensile strain. Negative magnetoresistance, which is observed even if magnetization becomes saturated, is assigned to weak localization.

Original languageEnglish
Pages (from-to)1032-1036
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume21
Issue number2-4
DOIs
Publication statusPublished - 2004 Mar
EventProceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan
Duration: 2003 Jul 142003 Jul 18

Keywords

  • (Ga
  • Ferromagnetic semiconductors
  • Magnetic anisotropy
  • Magnetoresistance
  • Mn)As
  • Weak localization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain'. Together they form a unique fingerprint.

Cite this