Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain

F. Matsukura; M. Sawicki; T. Dietl; D. Chiba; H. Ohno

doi:10.1016/j.physe.2003.11.165

Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain

F. Matsukura, M. Sawicki, T. Dietl, D. Chiba, H. Ohno

Research output: Contribution to journal › Conference article › peer-review

123 Citations (Scopus)

Abstract

Hall and sheet resistance of 200-nm thick metallic (Ga,Mn)As with compressive and tensile strain has been measured as a function of the magnetic field and temperature. The magnitude of resistance is found to depend rather strongly on relative orientations of magnetization and current and their directions in respect to crystal axes, the configuration corresponding to the highest resistance being different for compressive and tensile strain. Negative magnetoresistance, which is observed even if magnetization becomes saturated, is assigned to weak localization.

Original language	English
Pages (from-to)	1032-1036
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	21
Issue number	2-4
DOIs	https://doi.org/10.1016/j.physe.2003.11.165
Publication status	Published - 2004 Mar
Event	Proceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan Duration: 2003 Jul 14 → 2003 Jul 18

Keywords

(Ga
Ferromagnetic semiconductors
Magnetic anisotropy
Magnetoresistance
Mn)As
Weak localization

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2003.11.165

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title = "Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain",

abstract = "Hall and sheet resistance of 200-nm thick metallic (Ga,Mn)As with compressive and tensile strain has been measured as a function of the magnetic field and temperature. The magnitude of resistance is found to depend rather strongly on relative orientations of magnetization and current and their directions in respect to crystal axes, the configuration corresponding to the highest resistance being different for compressive and tensile strain. Negative magnetoresistance, which is observed even if magnetization becomes saturated, is assigned to weak localization.",

keywords = "(Ga, Ferromagnetic semiconductors, Magnetic anisotropy, Magnetoresistance, Mn)As, Weak localization",

author = "F. Matsukura and M. Sawicki and T. Dietl and D. Chiba and H. Ohno",

note = "Funding Information: The work in Poland was supported by the KBN Grant PBZ-KBN-044/P03/2001 and by FENIKS European Commission Project (G5RD-CT-2001-00535), and the partial work in Japan is supported by the IT-program of Research Revolution 2002 (RR2002) from MEXT and by Grant-in-Aids for Scientific Research from JSPS and MEXT. ; Proceedings of the Eleventh International Conference on Modulation (MSS11) ; Conference date: 14-07-2003 Through 18-07-2003",

year = "2004",

month = mar,

doi = "10.1016/j.physe.2003.11.165",

language = "English",

volume = "21",

pages = "1032--1036",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

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TY - JOUR

T1 - Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain

AU - Matsukura, F.

AU - Sawicki, M.

AU - Dietl, T.

AU - Chiba, D.

AU - Ohno, H.

N1 - Funding Information: The work in Poland was supported by the KBN Grant PBZ-KBN-044/P03/2001 and by FENIKS European Commission Project (G5RD-CT-2001-00535), and the partial work in Japan is supported by the IT-program of Research Revolution 2002 (RR2002) from MEXT and by Grant-in-Aids for Scientific Research from JSPS and MEXT.

PY - 2004/3

Y1 - 2004/3

N2 - Hall and sheet resistance of 200-nm thick metallic (Ga,Mn)As with compressive and tensile strain has been measured as a function of the magnetic field and temperature. The magnitude of resistance is found to depend rather strongly on relative orientations of magnetization and current and their directions in respect to crystal axes, the configuration corresponding to the highest resistance being different for compressive and tensile strain. Negative magnetoresistance, which is observed even if magnetization becomes saturated, is assigned to weak localization.

AB - Hall and sheet resistance of 200-nm thick metallic (Ga,Mn)As with compressive and tensile strain has been measured as a function of the magnetic field and temperature. The magnitude of resistance is found to depend rather strongly on relative orientations of magnetization and current and their directions in respect to crystal axes, the configuration corresponding to the highest resistance being different for compressive and tensile strain. Negative magnetoresistance, which is observed even if magnetization becomes saturated, is assigned to weak localization.

KW - (Ga

KW - Ferromagnetic semiconductors

KW - Magnetic anisotropy

KW - Magnetoresistance

KW - Mn)As

KW - Weak localization

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U2 - 10.1016/j.physe.2003.11.165

DO - 10.1016/j.physe.2003.11.165

M3 - Conference article

AN - SCOPUS:1642565443

VL - 21

SP - 1032

EP - 1036

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 2-4

T2 - Proceedings of the Eleventh International Conference on Modulation (MSS11)

Y2 - 14 July 2003 through 18 July 2003

ER -

Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain

Abstract

Keywords

ASJC Scopus subject areas

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