Abstract
Hall and sheet resistance of 200-nm thick metallic (Ga,Mn)As with compressive and tensile strain has been measured as a function of the magnetic field and temperature. The magnitude of resistance is found to depend rather strongly on relative orientations of magnetization and current and their directions in respect to crystal axes, the configuration corresponding to the highest resistance being different for compressive and tensile strain. Negative magnetoresistance, which is observed even if magnetization becomes saturated, is assigned to weak localization.
Original language | English |
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Pages (from-to) | 1032-1036 |
Number of pages | 5 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 21 |
Issue number | 2-4 |
DOIs | |
Publication status | Published - 2004 Mar 1 |
Event | Proceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan Duration: 2003 Jul 14 → 2003 Jul 18 |
Keywords
- (Ga
- Ferromagnetic semiconductors
- Magnetic anisotropy
- Magnetoresistance
- Mn)As
- Weak localization
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics