TY - JOUR
T1 - Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field
AU - Omiya, T.
AU - Matsukura, F.
AU - Dietl, T.
AU - Ohno, Y.
AU - Sakon, T.
AU - Motokawa, M.
AU - Ohno, H.
N1 - Funding Information:
The measurement at low-temperature and in high-magnetic fields was performed at the High Field Laboratory for Superconducting Materials, Institute for Materials Research, Tohoku University. This work was partly supported by the “Research for the Future” Program (# JSPS-RFTF97P00202) from JSPS and by a Grant-in-Aid on the Priority Area “Spin Controlled Semiconductor Nanostructures” (# 09244103) from the Ministry of Education, Japan.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2000/5
Y1 - 2000/5
N2 - Magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As have been investigated. Measurements at low temperature (50 mK) and high magnetic field (≤27 T) have been employed in order to determine the hole concentration p = 3.5×1020 cm-3 of a metallic (Ga0.947Mn0.053)As layer. The analysis of the temperature and magnetic field dependencies of the resistivity in the paramagnetic region was performed using the above value of p, which gave the magnitude of p-d exchange energy |N0β| to approximately 1.5 eV.
AB - Magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As have been investigated. Measurements at low temperature (50 mK) and high magnetic field (≤27 T) have been employed in order to determine the hole concentration p = 3.5×1020 cm-3 of a metallic (Ga0.947Mn0.053)As layer. The analysis of the temperature and magnetic field dependencies of the resistivity in the paramagnetic region was performed using the above value of p, which gave the magnitude of p-d exchange energy |N0β| to approximately 1.5 eV.
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U2 - 10.1016/S1386-9477(00)00099-0
DO - 10.1016/S1386-9477(00)00099-0
M3 - Conference article
AN - SCOPUS:0033707741
VL - 7
SP - 976
EP - 980
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 3
T2 - MSS9: The 9th International Conference on Modulated Semiconductor Structures
Y2 - 12 July 1999 through 16 July 1999
ER -