Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field

T. Omiya, F. Matsukura, T. Dietl, Y. Ohno, T. Sakon, M. Motokawa, H. Ohno

Research output: Contribution to journalConference articlepeer-review

120 Citations (Scopus)

Abstract

Magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As have been investigated. Measurements at low temperature (50 mK) and high magnetic field (≤27 T) have been employed in order to determine the hole concentration p = 3.5×1020 cm-3 of a metallic (Ga0.947Mn0.053)As layer. The analysis of the temperature and magnetic field dependencies of the resistivity in the paramagnetic region was performed using the above value of p, which gave the magnitude of p-d exchange energy |N0β| to approximately 1.5 eV.

Original languageEnglish
Pages (from-to)976-980
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume7
Issue number3
DOIs
Publication statusPublished - 2000 May
EventMSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn
Duration: 1999 Jul 121999 Jul 16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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