TY - JOUR
T1 - Magnetotransport properties of CoFeB/MgO/CoFe/MgO/CoFeB double barrier magnetic tunnel junctions with large negative magnetoresistance at room temperature
AU - Jiang, L. X.
AU - Naganuma, H.
AU - Oogane, M.
AU - Fujiwara, K.
AU - Miyazaki, T.
AU - Sato, K.
AU - Konno, T. J.
AU - Mizukami, S.
AU - Ando, Y.
PY - 2010
Y1 - 2010
N2 - CoFeB/MgO/CoFe/MgO/CoFeB double-barrier magnetic-tunnel junctions were fabricated using an ultrahigh vacuum magnetron sputtering system, and their magnetotransport properties were characterized at room temperature. After post-deposition annealing, the polarity of TMR changed from negative to positive with increasing bias voltage. A relatively high negative TMR ratio of 30% was obtained at a negative bias voltage. Furthermore, a unique bias voltage dependence of conductance was observed at room temperature. This behavior may be attributable to the large minority density of states caused by the interfacial oxidation of the middle CoFe layer.
AB - CoFeB/MgO/CoFe/MgO/CoFeB double-barrier magnetic-tunnel junctions were fabricated using an ultrahigh vacuum magnetron sputtering system, and their magnetotransport properties were characterized at room temperature. After post-deposition annealing, the polarity of TMR changed from negative to positive with increasing bias voltage. A relatively high negative TMR ratio of 30% was obtained at a negative bias voltage. Furthermore, a unique bias voltage dependence of conductance was observed at room temperature. This behavior may be attributable to the large minority density of states caused by the interfacial oxidation of the middle CoFe layer.
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U2 - 10.1088/1742-6596/200/5/052009
DO - 10.1088/1742-6596/200/5/052009
M3 - Conference article
AN - SCOPUS:77957094744
VL - 200
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - SECTION 5
M1 - 052009
ER -