Magnetotransport properties in perpendicularly magnetized tunnel junctions using an ultrathin Fe electrode

J. W. Koo, H. Sukegawa, S. Kasai, Z. C. Wen, S. Mitani

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The tunnel magnetoresistance (TMR) effect was investigated in perpendicularly magnetized magnetic tunnel junctions (p-MTJs) consisting of a stacked layer structure of ultrathin Fe (0.7)/MgO (1.8)/CoFeB (1.2-1.4) (in nm). A relatively large TMR ratio of 95% was obtained with an interface perpendicular magnetic anisotropy energy density of 1.5 mJm-2 at the Fe/MgO interface. Moreover, we found that the p-MTJ exhibits spin-dependent resonant tunnelling characteristics in the bias voltage dependence of differential conductance, corresponding to a quantum well confined in five monolayers of the Fe(0 0 1) atomic plane. The results showed that the resonant tunnelling of Δ1 symmetry electrons through the spin-dependent quantum well can be realized even in a p-MTJ structure with strong perpendicular magnetic anisotropy.

Original languageEnglish
Article number322001
JournalJournal of Physics D: Applied Physics
Volume47
Issue number32
DOIs
Publication statusPublished - 2014 Aug 13

Keywords

  • magnetic tunnel junction
  • perpendicular magnetic anisotropy
  • quantum well

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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