Magnetotransport properties in epitaxial Fe3O4(001) thin films with current perpendicular to the plane geometry

H. Yanagihara; K. Shimada; T. Niizeki; E. Kita; J. Inoue; A. Fukushima; S. Yuasa

doi:10.1063/1.4795842

Magnetotransport properties in epitaxial Fe₃O₄(001) thin films with current perpendicular to the plane geometry

H. Yanagihara, K. Shimada, T. Niizeki, E. Kita, J. Inoue, A. Fukushima, S. Yuasa

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Abstract

We investigated the fundamental transport properties of epitaxial magnetite (Fe₃O₄) films with applied current perpendicular to the plane geometry. The devices with a junction area of 36 μ m 2 were fabricated with TiN/Fe₃O₄/ TM (TM: Ti and Fe) stacking. Both the temperature dependence and the magnetic field dependence of the junction resistance were measured. Most of the resistance properties were independent of whether the electrode was magnetic (Fe) or nonmagnetic (Ti). Below the Verwey point, the junction resistance abruptly increased with decreasing temperature, and the resistance reached maximum at approximately 30 K. The magnetoresistance showed a peak of ∼ 27 at T ≈ 55 K. The observed resistance behavior was consistent with a hopping conduction mechanism with a Coulomb interaction.

Original language	English
Article number	17B104
Journal	Journal of Applied Physics
Volume	113
Issue number	17
DOIs	https://doi.org/10.1063/1.4795842
Publication status	Published - 2013 May 7

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Magnetotransport properties in epitaxial Fe3O4(001) thin films with current perpendicular to the plane geometry",

abstract = "We investigated the fundamental transport properties of epitaxial magnetite (Fe3O4) films with applied current perpendicular to the plane geometry. The devices with a junction area of 36 μ m 2 were fabricated with TiN/Fe3O4/ TM (TM: Ti and Fe) stacking. Both the temperature dependence and the magnetic field dependence of the junction resistance were measured. Most of the resistance properties were independent of whether the electrode was magnetic (Fe) or nonmagnetic (Ti). Below the Verwey point, the junction resistance abruptly increased with decreasing temperature, and the resistance reached maximum at approximately 30 K. The magnetoresistance showed a peak of ∼ 27 at T ≈ 55 K. The observed resistance behavior was consistent with a hopping conduction mechanism with a Coulomb interaction.",

author = "H. Yanagihara and K. Shimada and T. Niizeki and E. Kita and J. Inoue and A. Fukushima and S. Yuasa",

note = "Funding Information: This study was supported by the Element Science and Technology Project, and funded by the MEXT of Japan. Also, this work was partly supported by a Grant-in-Aid for Scientific Research (21019005) from the Japan Society for the Promotion of Science.",

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T1 - Magnetotransport properties in epitaxial Fe3O4(001) thin films with current perpendicular to the plane geometry

AU - Yanagihara, H.

AU - Shimada, K.

AU - Niizeki, T.

AU - Kita, E.

AU - Inoue, J.

AU - Fukushima, A.

AU - Yuasa, S.

N1 - Funding Information: This study was supported by the Element Science and Technology Project, and funded by the MEXT of Japan. Also, this work was partly supported by a Grant-in-Aid for Scientific Research (21019005) from the Japan Society for the Promotion of Science.

PY - 2013/5/7

Y1 - 2013/5/7

N2 - We investigated the fundamental transport properties of epitaxial magnetite (Fe3O4) films with applied current perpendicular to the plane geometry. The devices with a junction area of 36 μ m 2 were fabricated with TiN/Fe3O4/ TM (TM: Ti and Fe) stacking. Both the temperature dependence and the magnetic field dependence of the junction resistance were measured. Most of the resistance properties were independent of whether the electrode was magnetic (Fe) or nonmagnetic (Ti). Below the Verwey point, the junction resistance abruptly increased with decreasing temperature, and the resistance reached maximum at approximately 30 K. The magnetoresistance showed a peak of ∼ 27 at T ≈ 55 K. The observed resistance behavior was consistent with a hopping conduction mechanism with a Coulomb interaction.

AB - We investigated the fundamental transport properties of epitaxial magnetite (Fe3O4) films with applied current perpendicular to the plane geometry. The devices with a junction area of 36 μ m 2 were fabricated with TiN/Fe3O4/ TM (TM: Ti and Fe) stacking. Both the temperature dependence and the magnetic field dependence of the junction resistance were measured. Most of the resistance properties were independent of whether the electrode was magnetic (Fe) or nonmagnetic (Ti). Below the Verwey point, the junction resistance abruptly increased with decreasing temperature, and the resistance reached maximum at approximately 30 K. The magnetoresistance showed a peak of ∼ 27 at T ≈ 55 K. The observed resistance behavior was consistent with a hopping conduction mechanism with a Coulomb interaction.

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Magnetotransport properties in epitaxial Fe₃O₄(001) thin films with current perpendicular to the plane geometry

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