Magnetoresistive switch effect and its application to magnetic field sensors

Zhi Gang Sun, Masaki Mizuguchi, Hiroyuki Akinaga

Research output: Contribution to journalConference article

Abstract

Magnetoresistive switch effect (MRS effect) devices containing two gold (Au) electrodes with a gap less than 2 μm were successfully fabricated on semi-insulting GaAs substrates by wet etching method. Huge MRS effect was observed. Magnetoresistance (MR) ratio reached 1,000,000% under the magnetic filed of 1.5 T when the devices were operated just above the threshold voltage. The magnetic field sensitivity at small magnetic fields was significantly improved. MR ratio of more than 1000% was achieved at 0.03 T. A relative high MR ratio of 100,000% under the magnetic filed of 1.5 T was also achieved when the devices operating before the threshold voltage.

Original languageEnglish
Pages (from-to)2223-2226
Number of pages4
JournalMaterials Science Forum
Volume475-479
Issue numberIII
DOIs
Publication statusPublished - 2005 Jan 1
EventPRICM 5: The Fifth Pacific Rim International Conference on Advanced Materials and Processing - Beijing, China
Duration: 2004 Nov 22004 Nov 5

Keywords

  • Magnetoresistance
  • Magnetoresistive-switch effect
  • Wet etching

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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