Magnetoresistance oscillations induced by spin orbit interaction and intersubband scattering in a gated InP/In0.8Ga0.2As/ In0.52Al0.48As heterostructure

Mitsuhiro Abe; Makoto Kohda; Junsaku Nitta

doi:10.1002/pssc.200672828

Magnetoresistance oscillations induced by spin orbit interaction and intersubband scattering in a gated InP/In_0.8Ga_0.2As/ In_0.52Al_0.48As heterostructure

Mitsuhiro Abe, Makoto Kohda, Junsaku Nitta

ENG - Materials Science

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have investigated the magnetoresistance (MR) oscillations induced by spin-orbit interaction (SOI) and magneto intersubband scattering (MIS) in a gated InP/In_0.8Ga_0.2As/In_0.52Al _0.48As two dimensional electron gas. From the analysis of beating pattern in MR oscillations, fundamental field caused by MIS, B_FMIS, in fast Fourier transform spectra shifts lower as increasing the gate voltage. In contrast to B_FMIS, double fundamental peak structure induced by SOI appears above V_g = 5.0 V and shifts higher with the gate bias voltage. These two features are clearly distinguished each other in higher gate voltage above 7.0 V, which enables the extraction of Rashba SOI parameter α. The obtained α parameters are between 1.11 × 10 ^-11 eVm and 9.65 × 10^-12 eVm, which are about 5 time larger values than the results calculated from the k.p formalism for the SOI parameter.

Original language	English
Pages (from-to)	4243-4246
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
Issue number	12
DOIs	https://doi.org/10.1002/pssc.200672828
Publication status	Published - 2006 Dec 1
Event	4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, PASPS-IV - Sendai, Japan Duration: 2006 Aug 15 → 2006 Aug 18

ASJC Scopus subject areas

Condensed Matter Physics

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Magnetoresistance oscillations induced by spin orbit interaction and intersubband scattering in a gated InP/In_0.8Ga_0.2As/ In_0.52Al_0.48As heterostructure. / Abe, Mitsuhiro; Kohda, Makoto ; Nitta, Junsaku.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 3, No. 12, 01.12.2006, p. 4243-4246.

Research output: Contribution to journal › Conference article › peer-review

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title = "Magnetoresistance oscillations induced by spin orbit interaction and intersubband scattering in a gated InP/In0.8Ga0.2As/ In0.52Al0.48As heterostructure",

abstract = "We have investigated the magnetoresistance (MR) oscillations induced by spin-orbit interaction (SOI) and magneto intersubband scattering (MIS) in a gated InP/In0.8Ga0.2As/In0.52Al 0.48As two dimensional electron gas. From the analysis of beating pattern in MR oscillations, fundamental field caused by MIS, BFMIS, in fast Fourier transform spectra shifts lower as increasing the gate voltage. In contrast to BFMIS, double fundamental peak structure induced by SOI appears above Vg = 5.0 V and shifts higher with the gate bias voltage. These two features are clearly distinguished each other in higher gate voltage above 7.0 V, which enables the extraction of Rashba SOI parameter α. The obtained α parameters are between 1.11 × 10 -11 eVm and 9.65 × 10-12 eVm, which are about 5 time larger values than the results calculated from the k.p formalism for the SOI parameter.",

author = "Mitsuhiro Abe and Makoto Kohda and Junsaku Nitta",

year = "2006",

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doi = "10.1002/pssc.200672828",

language = "English",

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journal = "Physica Status Solidi C: Conferences",

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note = "4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, PASPS-IV ; Conference date: 15-08-2006 Through 18-08-2006",

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TY - JOUR

T1 - Magnetoresistance oscillations induced by spin orbit interaction and intersubband scattering in a gated InP/In0.8Ga0.2As/ In0.52Al0.48As heterostructure

AU - Abe, Mitsuhiro

AU - Kohda, Makoto

AU - Nitta, Junsaku

PY - 2006/12/1

Y1 - 2006/12/1

N2 - We have investigated the magnetoresistance (MR) oscillations induced by spin-orbit interaction (SOI) and magneto intersubband scattering (MIS) in a gated InP/In0.8Ga0.2As/In0.52Al 0.48As two dimensional electron gas. From the analysis of beating pattern in MR oscillations, fundamental field caused by MIS, BFMIS, in fast Fourier transform spectra shifts lower as increasing the gate voltage. In contrast to BFMIS, double fundamental peak structure induced by SOI appears above Vg = 5.0 V and shifts higher with the gate bias voltage. These two features are clearly distinguished each other in higher gate voltage above 7.0 V, which enables the extraction of Rashba SOI parameter α. The obtained α parameters are between 1.11 × 10 -11 eVm and 9.65 × 10-12 eVm, which are about 5 time larger values than the results calculated from the k.p formalism for the SOI parameter.

AB - We have investigated the magnetoresistance (MR) oscillations induced by spin-orbit interaction (SOI) and magneto intersubband scattering (MIS) in a gated InP/In0.8Ga0.2As/In0.52Al 0.48As two dimensional electron gas. From the analysis of beating pattern in MR oscillations, fundamental field caused by MIS, BFMIS, in fast Fourier transform spectra shifts lower as increasing the gate voltage. In contrast to BFMIS, double fundamental peak structure induced by SOI appears above Vg = 5.0 V and shifts higher with the gate bias voltage. These two features are clearly distinguished each other in higher gate voltage above 7.0 V, which enables the extraction of Rashba SOI parameter α. The obtained α parameters are between 1.11 × 10 -11 eVm and 9.65 × 10-12 eVm, which are about 5 time larger values than the results calculated from the k.p formalism for the SOI parameter.

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U2 - 10.1002/pssc.200672828

DO - 10.1002/pssc.200672828

M3 - Conference article

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VL - 3

SP - 4243

EP - 4246

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

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T2 - 4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, PASPS-IV

Y2 - 15 August 2006 through 18 August 2006

ER -

Magnetoresistance oscillations induced by spin orbit interaction and intersubband scattering in a gated InP/In_0.8Ga_0.2As/ In_0.52Al_0.48As heterostructure

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