We have investigated the magnetoresistance (MR) oscillations induced by spin-orbit interaction (SOI) and magneto intersubband scattering (MIS) in a gated InP/In0.8Ga0.2As/In0.52Al 0.48As two dimensional electron gas. From the analysis of beating pattern in MR oscillations, fundamental field caused by MIS, BFMIS, in fast Fourier transform spectra shifts lower as increasing the gate voltage. In contrast to BFMIS, double fundamental peak structure induced by SOI appears above Vg = 5.0 V and shifts higher with the gate bias voltage. These two features are clearly distinguished each other in higher gate voltage above 7.0 V, which enables the extraction of Rashba SOI parameter α. The obtained α parameters are between 1.11 × 10 -11 eVm and 9.65 × 10-12 eVm, which are about 5 time larger values than the results calculated from the k.p formalism for the SOI parameter.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2006 Dec 1|
|Event||4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, PASPS-IV - Sendai, Japan|
Duration: 2006 Aug 15 → 2006 Aug 18
ASJC Scopus subject areas
- Condensed Matter Physics