TY - JOUR
T1 - Magnetoresistance of perpendicularly magnetized tunnel junction using L10-CoNiPt with low saturation magnetization
AU - Kim, G.
AU - Hiratsuka, T.
AU - Naganuma, H.
AU - Oogane, M.
AU - Ando, Y.
PY - 2010
Y1 - 2010
N2 - Investigations of the structural and magnetic properties of thin Co 50-xNixPt50 (x = 0, 10, 15, 37.5) films and fabrication of magnetic tunnel junctions (MTJs) using Co50Pt 50 and Co35Ni15Pt50 electrodes were performed. X-ray diffraction analyses revealed that 20-nm-thick CoPt and CoNiPt films were epitaxially grown with (001)-orientation with an L1 0-chemical order parameter of 0.66-0.82. CoNiPt with various Ni contents magnetized perpendicularly; the saturation magnetization reduced to 157 emu/cm3 when the Ni content was increased to 37.5%. Magnetotransport measurements under a magnetic field applied perpendicular to the film plane revealed a tunnel magnetoresistance ratio of 10% and 1% at 10 K and 300 K, respectively, for MTJ using Co35Ni15Pt50 electrodes.
AB - Investigations of the structural and magnetic properties of thin Co 50-xNixPt50 (x = 0, 10, 15, 37.5) films and fabrication of magnetic tunnel junctions (MTJs) using Co50Pt 50 and Co35Ni15Pt50 electrodes were performed. X-ray diffraction analyses revealed that 20-nm-thick CoPt and CoNiPt films were epitaxially grown with (001)-orientation with an L1 0-chemical order parameter of 0.66-0.82. CoNiPt with various Ni contents magnetized perpendicularly; the saturation magnetization reduced to 157 emu/cm3 when the Ni content was increased to 37.5%. Magnetotransport measurements under a magnetic field applied perpendicular to the film plane revealed a tunnel magnetoresistance ratio of 10% and 1% at 10 K and 300 K, respectively, for MTJ using Co35Ni15Pt50 electrodes.
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U2 - 10.1088/1742-6596/200/5/052011
DO - 10.1088/1742-6596/200/5/052011
M3 - Conference article
AN - SCOPUS:77957059039
VL - 200
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - SECTION 5
M1 - 052011
ER -